Transistors
Publication date: May
2005
SJC
00333
AED
1
2SC5950
Silicon NPN epitaxial planar type
For general amplifi cation
Complementary to
2
SA
2122
Features
High forward current transfer ratio h
FE
High forward current transfer ratio h
High forward current transfer ratio h
Smini typ package, allowing downsizing of the equipment and
automatic
insertion through the tape packing
Absolute Maximum Ratings
T
a
=
25
aa
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
60
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Emitter-base voltage (Collector open)
V
EBO
7
V
Collector current
I
C
100
mA
Peak collector current
I
CP
200
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
TT
150
°
C
Storage temperature
T
stg
TT
−
55
to
+
150
°
C
Electrical Characteristics
T
a
=
25
aa
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
µ
A, I
E
=
0
EE
60
V
Collector-emitter voltage (Base open)
V
CEO
I
C
=
2
mA, I
B
=
0
50
V
Emitter-base voltage (Collector open)
V
EBO
I
E
=
10
EE
µ
A, I
C
=
0
7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
20
V, I
E
=
0
EE
0
.
1
µ
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
=
10
V, I
CE
CE
B
=
0
100
µ
A
Forward current transfer ratio
h
FE
hh
V
CE
=
10
V, I
CE
CE
C
=
2
mA
160
460
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
100
mA, I
B
=
10
mA
0
.
1
0
.
3
V
Transition frequency
f
T
ff
V
CB
=
10
V, I
E
=
EE
−
2
mA, f =
200
MHz
100
MHz
Collector output capacitance
(Common base, input open circuited)
C
ob
V
CB
=
10
V, I
E
=
0
, f =
1
MHz
EE
2
.
2
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7030
measuring methods for transistors.
Unit: mm
1: Base
2: Emitter
3: Collector
SMini3-G1 Package
2.1
±
0.
1
1.3
±
0.1
0.3
+0.1
–0.0
2.0
±
0.2
1.2
5
±
0.10
(0.425
)
1
3
2
(0.65) (0.65)
0.
2
±
0.
1
0.
9
±
0.
1
0 to 0.
1
0.
9
+0.2 –0.
1
0.15
+0.10
–0.05
5
°
10
°
Marking Symbol:
7
M
This product complies with the RoHS Directive (EU 2002/95/EC).
