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Transistors

1

Publication date: August 2003

SJC00297AED

2SC5845

Silicon NPN epitaxial planar type

For general amplification

Features

High forward current transfer ratio h

FE

Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine pack-
ing

Absolute Maximum Ratings  

T

a

 

=

 25

°

C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

CBO

I

C

 

=

 10 

µΑ

, I

E

 

=

 

0

60

V

Collector-emitter voltage (Base open)

V

CEO

I

C

 

=

 2 mA, I

B

 

=

 

0

50

V

Emitter-base voltage (Collector open)

V

EBO

I

E

 

=

 10 

µΑ

, I

C

 

=

 

0

7

V

Collector-base cutoff current (Emitter open)

I

CBO

V

CB

 

=

 20 V, I

E

 

=

 0

0.1

µ

A

Collector-emitter cutoff current (Base open)

I

CEO

V

CE

 

=

 10 V, I

B

 

=

 0

100

µ

A

Forward current transfer ratio

h

FE

V

CE

 

=

 10 V, I

C

 

=

 2 mA

160

460

Collector-emitter saturation voltage

V

CE(sat)

I

C

 

=

 100 mA, I

B

 

=

 10 mA

0.1

0.3

V

Collector output capacitance

C

ob

V

CB

 

=

 10 V, I

E

 

=

 0, f 

=

 1 MHz

2.2

pF

(Common base, input open circuited)

Transition frequency

f

T

V

CB

 

=

 10 V, I

E

 

=

 

2 mA, f = 200 MHz

100

MHz

Electrical Characteristics  

T

a

 

=

 25

°

±

 3

°

C

Unit: mm

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

60

V

Collector-emitter voltage (Base open)

V

CEO

50

V

Emitter-base voltage (Collector open)

V

EBO

7

V

Collector current

I

C

100

mA

Peak collector current

I

CP

200

mA

Collector power dissipation

P

C

200

mW

Junction temperature

T

j

150

°

C

Storage temperature

T

stg

55 to 

+

150

°

C

Marking Symbol: 7M

0.40

+0.10

–0.05

(0.65)

1.50

+0.25 –0.05

2.8

+0.2 –0.3

2

1

3

(0.95) (0.95)

1.9

±

0.1

2.90

+0.20

–0.05

0.16

+0.10

–0.06

0.4

±

0.2

10˚

0 to 0.1

1.1

+0.2 –0.1

1.1

+0.3 –0.1

1: Base
2: Emitter
3: Collector

EIAJ: SC-59

Mini3-G1 Package

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

This product complies with the RoHS Directive (EU 2002/95/EC).

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