Transistors
1
Publication date: August 2003
SJC00302AED
2SA2078
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5846
■
Features
•
High forward current transfer ratio h
FE
•
SSS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
−
60
V
Collector-emitter voltage (Base open)
V
CEO
−
50
V
Emitter-base voltage (Collector open)
V
EBO
−
7
V
Collector current
I
C
−
100
mA
Peak collector current
I
CP
−
200
mA
Collector power dissipation
P
C
100
mW
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
−
55 to
+
125
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
−
10
µ
A, I
E
=
0
−
60
V
Collector-emitter voltage (Base open)
V
CEO
I
C
=
−
100
µ
A, I
B
=
0
−
50
V
Emitter-base voltage (Collector open)
V
EBO
I
E
=
−
10
µ
A, I
C
=
0
−
7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
−
20 V, I
E
=
0
−
0.1
µ
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
=
−
10 V, I
B
=
0
−
100
µ
A
Forward current transfer ratio
h
FE
V
CE
=
−
10 V, I
C
=
−
2 mA
180
390
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
−
100 mA, I
B
=
−
10 mA
−
0.2
−
0.5
V
Transition frequency
f
T
V
CB
=
−
10 V, I
E
=
1 mA, f
=
200 MHz
80
MHz
Collector output capacitance
C
ob
V
CB
=
−
10 V, I
E
=
0, f
=
1 MHz
2.2
pF
(Common base, input open circuited)
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
1.20
±
0.05
0.52
±
0.03
0 to 0.01
0.15 max.
5˚
0.15 min.
0.80
±
0.05
0.15 min.
0.33
(0.40)
(0.40)
1
2
3
5˚
0.80
±
0.05
1.20
±
0.05
+0.05
–0.02
0.10
+0.05
–0.02
0.23
+0.05
–0.02
Unit: mm
Marking Symbol: 7H
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
1 : Base
2 : Emitter
3 : Collector
SSSMini3-F1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
