Amplified InAsSb Detector
Chapter 6: Specifications
Page 8
TTN010624-D02
Chapter 6
Specifications
General Specifications
1
Optical Specifications
Wavelength Range
1.0 - 5.8 µm
Peak Wavelength (
p
)
4.9 µm
Peak Response (
p
)
1.6 A/W (Typ.), 0.8 A/W (Min)
Electrical Specifications
Gain Adjustment Range
40 dB
Gain Steps
8
Gain Settings (dB)
0, 4, 10, 16, 22, 28, 34, 40
Filter Steps
8
Filter Settings (kHz)
12.5, 25, 50, 100, 200, 400, 800, 1600
Output Voltage
2
0 - 5 V (50 Ω)
0 - 10 V (Hi-Z)
Output Impedance
50 Ω
Max Output Current
100 mA
Load Impedance
50 Ω - Hi-Z
Offset
3
20 mV (Typ.)
45 mV (Max)
Offset Drift (40 dB)
2.7 mV/°C
TEC Temperature
-30 °C
Physical Specifications
Detector
InAsSb
Active Area
Ø1 mm
Surface Depth
0.12" (3.1 mm)
Output
BNC
Package Size
3" x 2.2" x 2.2" (76.2 mm x 55.9 mm x 55.9 mm)
Weight
(Detector / Power Supply)
0.42 lbs / 0.82 lbs (191 g / 372 g)
Power Supply
27 W
Input Power
100 - 240 VAC, 50 - 60 Hz
Storage Temperature
0 to 60 °C
Operating Temperature
0 to 30 °C
1
All measurements performed with a 50
Ω load unless stated otherwise. The PDA10PT has a 50 Ω series terminator resistor (i.e., in series
with amplifier output). This forms a voltage divider wi
th any load impedance (e.g., 50 Ω load divides signal in half).
2
Saturation of the output voltage may cause damage to the InAsSb detector element.
3
After the temperature has stabilized on all gain steps. Also note that the worst-case offset is on the 40 dB gain step.
