Amplified InGaAs Detector
Chapter 7: Specifications
Page 8
13129-D02
General Specifications
Detector
Extended InGaAs PIN
Active Area
0.8 mm
2
(Ø1.0 mm)
Surface Depth
0.08" (2.0 mm)
Output
BNC
Weight
(Detector/Power Supply)
0.42 lbs / 0.82 lbs (191 g / 372 g)
Power Supply
30 W
Input Power
100 - 240 VAC, 47
– 63 Hz
Storage Temperature
0 to 85 °C
Operating Temperature
0 to 30 °C
Accessories
SM1RR
Optical Head Size
3" x 2.2" x 2.2"
(76.2 mm x 55.9 mm x 55.9 mm)
Gain/LPF Switches
8-Pos Rotary
Gain Steps
8 x 10 dB steps
Filter Steps
8
Gain Adjustable Range
70 dB
Gain (Hi-Z)
4
Low-Pass Filter
Bandwidth
NEP (p
W/√Hz)
5
0 dB
1.51 kV/A
1M
1 MHz
0 dB
15.9 @ DC - 2 MHz
10 dB
4.75 kV/A
500k
500 kHz
10 dB
8.27 @ DC - 1.5 MHz
20 dB
15.0 kV/A
100k
100 kHz
20 dB
2.8 @ DC - 700 kHz
30 dB
47.5 kV/A
50k
50 kHz
30 dB
1.68 @ DC - 250 kHz
40 dB
151 kV/A
10k
10 kHz
40 dB
1.33 @ DC - 150 kHz
50 dB
475 kV/A
5k
5 kHz
50 dB
1.88 @ DC - 20 kHz
60 dB
1500 kV/A
1k
1 kHz
60 dB
2.22 @ DC - 7 kHz
70 dB
4750 kV/A
500
500 Hz
70 dB
2.11 @ DC - 2.5 kHz
4
Gain with a 50
Ω load is one-half the hi-Z gain. All values are ±2%.
5
NEP values measured using a 50 Ω load and a low-pass filter setting of 1MHz; calculated at the
detector’s peak responsivity wavelength.
