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Si Biased Detector
Chapter 7: Specifications
Page 12
13052-D05
Chapter 7 Specifications
All measurements are performed at 25 °C ambient temperature unless stated
otherwise.
a
When long-term UV light is applied, the product specifications may degrade. For example,
the product’s UV response may decrease and the dark current may increase. The degree
to which the specifications may degrade is based upon factors such as the irradiation
level, intensity, and usage time.
b
Measured with specified bias voltage of 10.0 V.
c
Low battery voltage will result in slower rise times and decreased bandwidth.
d
For a 50
Ω
Load
e
Measured with a 1 M
Ω
Load
f
Assumes the battery voltage drops below 9.6 V. The reverse protection diode generates a
0.6 V drop.
Electrical Specifications
Detector
- Silicon
Active Area
-
Ø1.0 mm (0.8 mm
2
)
Wavelength Range
a
λ
200 to 1100 nm
Peak Wavelength
λ
p
730 nm (Typ.)
Peak Response
b
(
λ
p
)
0.44 A/W (Typ.)
Shunt Resistance
R
sh
1
G
Ω
(Typ.)
Diode Capacitance
C
J
6 pF (Typ.)
Rise Time
b,c,d
t
r
1 ns (Typ.)
NEP (830 nm)
-
5.0 x 10
-14
W/
√
Hz (Typ.)
Photodiode Bias Voltage
V
R
10
V
Dark Current
e
I
D
0.3 nA (Typ.)
2.5 nA (Max)
Output Voltage
V
OUT
0 to 10 V
General
On/Off Switch
Slide
Battery Check Switch
Momentary Pushbutton
Output
BNC (DC Coupled)
Package Size
2.8" x 1.9" x 0.83"
(70 mm x 48 mm x 21 mm)
PD Surface Depth
0.13" (3.4 mm)
Weight
0.2 kg
Accessories
SM1T1 Coupler
SM1RR Retainer Ring
Storage Temp
-20 to 70 °C
Operating Temp
10 to 50 °C
Battery
A23, 12 V
DC
, 40 mAh
Low Battery Voltage
f
V
OUT
(Hi-Z)
V
OUT
(50
Ω
)
(See Battery Check)
~9 V
~400 mV
Summary of Contents for DET10A
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