Si Biased Detector
Chapter 7: Specifications
Page 12
TTN133840-D02
Chapter 7 Specifications
All measurements are performed at 25 °C ambient temperature, unless stated
otherwise.
Electrical Specifications
Detector
- Si
Active Area
-
Ø9.8 mm (75.4 mm
2
)
Wavelength Range
λ
320 to 1100 nm
Peak Wavelength
λ
p
960
nm
Peak Response
2
(
λ
p
)
0.72 A/W
Junction Capacitance
C
J
150
pF
(Typ.)
Rise Time (632 nm)
2,3,4
t
r
35 ns (Typ.)
NEP (
λ
p
)
-
2.4 x 10
-14
W/
√
Hz (Typ.)
Bias Voltage
V
R
10
V
Dark Current
5
I
D
0.9 nA (Typ.)
10 nA (Max)
Output Current
I
OUT
0 to 10 mA
General
On/Off Switch
Slide
Battery Check Switch
Momentary Pushbutton
Output
BNC (DC Coupled)
Package Size
2.79" x 1.96" x 0.89"
(70.9 mm x 49.8 mm x 22.5 mm)
PD Surface Depth
6
0.13" (3.3 mm)
Weight
0.10 kg
Accessories
SM1T1 Coupler
SM1RR Retainer Ring
Storage Temp
-20 to 70 °C
Operating Temp
10 to 50 °C
Battery
A23, 12 V
DC
, 40 mAh
Low Battery Voltage
7
(See Battery Check)
V
OUT
(Hi-Z)
~9 V
V
OUT
(50
Ω
)
~170 mV
2
Measured with specified bias voltage of 10.0 V
3
Low battery voltage will result in slower rise times and decreased bandwidth.
4
For a 50
Ω
Load
5
Measured with a 1 M
Ω
Load
6
Measured from the front of the housing body.
7
Assumes the battery voltage drops below 9.6 V. The reverse protection diode generates a
0.6 V drop.
