THORLABS APD110 Series, Operation Manual

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© 2019 Thorlabs 12
APD110x/120x
5 Appendix
5.1 Technical Data
APD110C APD120A APD120A2
Parameter
Detector Material/Type InGaAs APD Silicon APD
UV-enhanced Silicon
APD
Wavelength Range 900 to 1700 nm 400 to 1000 nm 200 to 1000 nm
Maximum APD Responsivity
9 A/W
@ 1500 m, M = 10
25 A/W
@ 800 nm, M = 50
25 A/W
@ 600 nm, M = 50
Detector Active Area Diameter 0.2 mm 1 mm 1 mm
Transimpedance Gain
100 kV/A
50 kV/A with 50
W
ter-
mination
100 kV/A
50 kV/A with 50
W
ter-
mination
100 kV/A
50 kV/A with 50
W
ter-
mination
Maximum Conversion Gain
0.9 x 10 6 V/W 2.5 x 10 6 V/W 2.5 x 10 6 V/W
OUTPUT Bandwidth (3 dB) DC to 50 MHz DC to 50 MHz DC to 50 MHz
CW Saturation Power 4.2 µW 1.5 µW 1.5 µW
Maximum Input Power
(Photodiode Damage
Threshold)
1 mW 1 mW 1 mW
Minimum NEP (DC - 50 MHz)
Integrated Noise (DC - 50
MHz)
3.3 nW (RMS) 1.4 nW (RMS) 1.5 nW (RMS)
Electrical Output, Impedance
BNC, 50
W
Maximum Output Voltage
3.6 V (High Z load)
1.8 V (50
W
)
DC-Offset Electrical Output < ±15 mV
Power Supply
±
12 V, 250 mA (100 V,120 V,230 V switchable)
General
Operating Temperature Range
1 )
0 - 40 °C
Storage Temperature Range -40 to 70 °C
Dimensions (W x H x D) 2 x 2.5 x 1"
Weight < 0.1 kg
1 ) Non-condensing
All technical data are valid at (23 ± 1) °C and (45 ± 15) % rel. humidity (non condensing)