Introduction
2
SLUUBS2A – November 2017 – Revised December 2017
Copyright © 2017, Texas Instruments Incorporated
UCC21220EVM-009
1
Introduction
The UCC21220EVM-009 device is designed for evaluation of the UCC21220 device, with a 4-A source
and 6-A sink peak current for driving Si MOSFETs, IGBTs, and WBG devices, including SiC and GaN
FETs. Developed for high voltage applications where isolation and reliability are required, the UCC21220
device delivers reinforced isolation of 3-kV
RMS
and a surge immunity tested up to 6-kV, with a common
mode transient immunity (CMTI) greater than 100 V/ns. The device has an impressive propagation delay
of 25 ns and the tightest channel-to-channel delay matching in the industry of less than 5 ns, which
enables high-switching frequency, high-power density, and efficiency.
The flexible, universal capability of the UCC21220 device, with up to 5-V VCCI and 18-V VDDA and
VDDB, allows it to be used as a low-side, high-side, high-side/low-side, or half-bridge driver with dual
PWM input or single PWM input. With its integrated components, advanced protection features (UVLO,
enable and disable), and optimized switching performances, the UCC21220 device enables designers to
build smaller, more robust designs for enterprise, telecom, automotive, and industrial applications, allowing
for faster time to market.
