Texas Instruments TPS7A14EVM-058 User Manual Download Page 6

The slew rate of the load step can be adjusted by C11, R7, R8, and R9. In this section, only R8 and R9 is 
adjusted to set the slew rate. For a 0-mA to 1-A to 0-mA load step, use 

Table 2-1

 to select a value of R8 and R9 

that results in the desired rise or fall time.

Table 2-1. Suggested Ramp Rate Resistor Values

R8

R9

Rise/Fall Time

97.6 kΩ

86.6 kΩ

10 µs

52.3 kΩ

40.2 kΩ

5 µs

31.6 kΩ

20.5 kΩ

2.5 µs

12.4 kΩ

8.06 kΩ

1 µs

6.19 kΩ

4.02 kΩ

500 ns

3.74 kΩ

2.43 kΩ

300 ns

2.49 Ω

1.62 Ω

200 ns

806 Ω

806 Ω

100 ns

After the EVM is modified (if needed), connect a power supply to banana connectors J17 (VDD) and J21 (GND) 
with a 5-V DC supply and a 1-A DC current limit. As illustrated in 

Figure 2-3

 and 

Figure 2-4

, the TPS7A14 

transient response is very fast and the output voltage recovers in well under 1 ms after the initial load transient. 
Therefore, use a load transient pulse duration limit of 1 ms to prevent excessive heating of the pulsed resistors 
(R2, R3, R4, R5, and R6). Configure a function generator for the 50-Ω output, in a 0-V DC to 5-V DC square 
pulse. If necessary, burst mode can be configured in the function generator for repetitive, low duty cycle, load 
transient testing.

A 10.7-kΩ resistor is installed on the EVM at R8, and a 10-kΩ resistor is installed on the EVM at R9. These 
resistors provide approximately 1 A/μs slew rate from 0 mA to 1 A. 

Figure 2-3

 and 

Figure 2-4

 provide example 

test data with R8 = 10.7 kΩ and R9 = 10 kΩ. The red trace is the output voltage and the blue trace is the output 
current. J10 provides 1 mA of DC load current and R2, R3, R4, R5, and R6 provide 949 mA of pulsed load. The 
resulting test data shows a 1-mA to 950-mA load step on VOUT of the LDO, with only a 2.2-μF capacitor on the 
output of the LDO.

Figure 2-3. TPS7A14EVM-058 Load Transient 

Results: 1-mA to 950-mA Load Step

Figure 2-4. TPS7A14EVM-058 Load Transient 

Results: 950-mA to 1-mA Load Step

Setup

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TPS7A14EVM-058 Evaluation Module

SBVU073 – NOVEMBER 2021

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Summary of Contents for TPS7A14EVM-058

Page 1: ...printed circuit board PCB layout a schematic diagram and a bill of materials BOM Throughout this document the terms evaluation board evaluation module and EVM are synonymous with the TPS7A14EVM 058 Ta...

Page 2: ...oad Step 6 Figure 3 1 Top Assembly Layer and Silk Screen 7 Figure 3 2 Top Layer Routing 7 Figure 3 3 Layer 2 7 Figure 3 4 Layer 3 7 Figure 3 5 Bottom Layer Routing 8 Figure 3 6 Bottom Assembly Layer a...

Page 3: ...und connection 2 1 3 VOUT and GND VOUT and GND are the connection terminals for the output load The VOUT terminal is the positive connection and the GND terminal is the negative that is ground connect...

Page 4: ...ors installed These four components provide the minimum required solution size as illustrated by the white boxes in Figure 1 1 Additional pads are available to test the LDO with additional input bias...

Page 5: ...urrent probes a 10 AWG wire can be used WARNING The sensors of some current probes are tied to GND and cannot come into contact with energized conductors See the user manual of your current probe for...

Page 6: ...f the pulsed resistors R2 R3 R4 R5 and R6 Configure a function generator for the 50 output in a 0 V DC to 5 V DC square pulse If necessary burst mode can be configured in the function generator for re...

Page 7: ...14 LDO LMG1020YFFR gate driver and pulsed resistors R2 R3 R4 R5 and R6 are most at risk of raising to a high junction temperature during normal operation Figure 3 1 Top Assembly Layer and Silk Screen...

Page 8: ...m Layer Routing Figure 3 6 Bottom Assembly Layer and Silk Screen Board Layout www ti com 8 TPS7A14EVM 058 Evaluation Module SBVU073 NOVEMBER 2021 Submit Document Feedback Copyright 2021 Texas Instrume...

Page 9: ...50V 10uF C15 50V 10uF C14 1 00k R1 1 2 J13 50V 0 1uF C13 2 2 F 10V C2 10V 2 2uF C3 154 R5 154 R6 154 R4 154 R3 GND EN VIN EN VOUT 154 R2 100V 1pF C11 0 R11 0 R7 3 5 6 8 4 7 1 2 Q1 CSD17313Q2 1 2 3 4...

Page 10: ...nufacturing J18 1 SMA Straight Jack Gold 50 Ohm TH SMA Straight Jack TH 901 144 8RFX Amphenol RF Q1 1 30V MOSFET N CH 30 V 5 A DQK0006C WSON 6 DQK0006C CSD17313Q2 Texas Instruments None R8 1 10 7k RES...

Page 11: ...TH SMA Straight Jack TH 901 144 8RFX Amphenol RF J8 J10 0 Terminal Block 5 mm 2x1 Tin TH Terminal Block 5 mm 2x1 TH 691 101 710 002 Wurth Elektronik J13 0 Header 100mil 2x1 Gold TH Sullins 100mil 1x2...

Page 12: ...ther than TI b the nonconformity resulted from User s design specifications or instructions for such EVMs or improper system design or c User has not paid on time Testing and other quality control tec...

Page 13: ...These limits are designed to provide reasonable protection against harmful interference in a residential installation This equipment generates uses and can radiate radio frequency energy and if not in...

Page 14: ...instructions set forth by Radio Law of Japan which includes but is not limited to the instructions below with respect to EVMs which for the avoidance of doubt are stated strictly for convenience and s...

Page 15: ...any interfaces electronic and or mechanical between the EVM and any human body are designed with suitable isolation and means to safely limit accessible leakage currents to minimize the risk of electr...

Page 16: ...R DAMAGES ARE CLAIMED THE EXISTENCE OF MORE THAN ONE CLAIM SHALL NOT ENLARGE OR EXTEND THIS LIMIT 9 Return Policy Except as otherwise provided TI does not offer any refunds returns or exchanges Furthe...

Page 17: ...change without notice TI grants you permission to use these resources only for development of an application that uses the TI products described in the resource Other reproduction and display of thes...

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