Texas Instruments LM74670-SQEVM, User Manual, Page: 4 / 19

Voltage
Regulator
Anode
Vbatt
LM74670-Q1
Cathode
Cout
Vcap
TVS+
Vout
TVS-
Introduction
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1 Introduction
The Texas Instruments LM74670-Q1-SQ Evaluation Module helps designers evaluate the operation and
performance of the LM74670-Q1 Reverse Polarity Protection Smart Diode Controller. This EVM
demonstrates how an N-Channel power MOSFET can emulate a very low forward voltage diode with zero
Iq and low leakage current flowing through the IC. In this design scheme the LM74670-Q1 is combined
with a MOSFET and used in series with battery as a replacement for schottky diode and PFET in reverse
polarity protection circuitry as shown in
Figure 1 . For more information on the LM74670-Q1 functional and
electrical characteristics, see the LM74670-Q1 Reverse Polarity Protection Smart Diode Controller Data
Sheet (
LM74670-Q1 ).
Table 1. Device and Package Configurations
CONVERTER IC PACKAGE
U1 LM74670-Q1 VSSOP-8
2 Setup
This section describes the jumpers and connectors on the EVM as well and how to properly connect, set
up and use the LM74670-Q1-SQEVM. Ensure the power supply is turned off while making connections on
the board.
2.1 Input/Output Connector Description
• VBAT_1 : Power input connector to the positive rail of the input power supply.
• GND : Battery ground connector.
• VOUT: is the power output connector to the positive side of the load.
• TEST POINTS: are also available at VBAT_1 , GND , VOUT , DRV_1 (MOSFET Gate Voltage), and
VCAP_1 (Charge pump capacitor).
Figure 1. LM74670-Q1 Typical Application Circuit
4 List of Tables SNVU494 – October 2015
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