EVM Components
8
SBOU225A – May 2019 – Revised December 2019
Copyright © 2019, Texas Instruments Incorporated
INA293EVM
5
EVM Components
This section summarizes the INA293EVM components. For the following instructions, X is pinout A or B,
and n is gain option 1, 2, 3, 4, or 5.
5.1
R2_Xn, R3_Xn, R4_Xn, C2_Xn, C3_Xn
R2_Xn, R3_Xn, R4_Xn, are factory-installed 0-
Ω
0603 resistors.
C2_Xn, C3_Xn, are not populated.
Collectively, these pads allow for user-defined filters for the input pins (IN+ and IN–) and output pin (OUT)
of INA293. If a filter is desired, remove these resistors and replace them with > 0-
Ω
SMT resistors, and
populate the capacitor pads with capacitors. When using input filtering, take into account the input bias
current of the device.
5.2
C1_Xn
C1_Xn is a 0.1-µF, power-supply bypass capacitor.
5.3
R1_Xn
R1_Xn is unpopulated, but allows for a surface-mount shunt resistor to be soldered down between the
Vin+ and Vin– pads, which are sensed by IN+ and IN– input pins. If used, make sure R1_Xn has proper
power dissipation for the selected current load. The chosen resistor must have a 2512 footprint.
5.4
U1_Xn (INA293)
U1_Xn is the location for the INA293Xn test device.
The following list of factors are involved in selecting the appropriate device gain:
•
The differential input voltage is either applied across the inputs or developed based on the load current
that flows through the shunt resistor.
•
Make sure that the output voltage does not exceed the supply voltage. This limiting factor requires
attention to device selection.
•
The selected device must allow the output voltage to remain within the acceptable range after the
developed input voltage is amplified by the respective device gain. The output voltage must remain
within the device-specified swing limitations for response in the linear range.
•
An output below the minimum allowable output requires the selection of a device with a higher gain.
Likewise, an output above the maximum allowable output requires the selection of a device with a
lower gain.