Texas Instruments bq2013HEVM-001, User Manual, Page: 8 / 28

Pin Descriptions
2-2
2.1 Pin Descriptions
P1 HDQ/Serial communications port
P2 DONE/Done input
P3 BAT+/Battery positive/pack positive
P4 ACC/Display activation
P5 RBI/Register backup input
P6 GND/Ground
P7 PACK–/Pack negative
P8 BAT–/Battery negative
2.2 Programming
The DM2013H circuit module is preconfigured for battery pack chemistry,
voltage, and pack capacity. The circuit module can be reprogrammed for pack
chemistry, voltage, capacity, and other operating parameters via the
programming resistors on the board. The resistors are used to set the
programming pins to a high (H), low (L), or float (Z) state on initialization. To
set a high (H) state for a programming pin requires the pullup resistor; a low
(L) state requires the pulldown resistor; and the float (Z) requires no resistors
on the programming pin. The shaded area of the tables indicates the
bq2013HEVM-001 configuration. See the bq2013H data sheet for a complete
description of how the bq2013H is programmed.
2.2.1 Full Capacity
Pins 2 and 3 of the bq2013H determine the full capacity or programmed full
count (PFC) of the DM2013H. Resistors R12–R15 set the pins to a high (H),
low (L), or float (Z) state during board initialization.
Table 2–1. Full Capacity Programming
PFC Input Settings
Pin 2 Pin 3 Sense Resistor M
Ω
Capacity (Ah)
H L 10 3.5
Z Z 10 4.5
Z H 10 5.5
2.2.2 Self-Discharge Settings for Chemistry
Battery chemistries have different self-discharge rates. Pin 4 of the bq2013H
determines the self-discharge factors of the DM2013H. Resistors R17 and
R18 set the pin to a high (H), low (L), or float (Z) state during board initialization.