EMIF
7.3
EMIF
7.3.1 Introduction
7.3.1.1
Features
The general features of the EMIF module are as follows:
•
16-bit data path to external SDRAM memory
•
One 128-bit OCPIP 2.2 interface
•
Support for the following memory types:
–
mDDR (LPDDR1)
–
DDR2
–
DDR3
External memory configurations supported:
•
Memory device capacity
–
Up to 1G Byte addressability
•
Flexible bank/row/column/chip-select address multiplexing schemes
•
Device driver strength feature for mobile DDR supported
•
Supports following CAS latencies:
–
DDR2 => 2, 3, 4, 5, 6, and 7
–
DDR3 => 5, 6, 7, 8, 9, 10, and 11
–
mDDR => 2, 3, and 4
•
Supports following number of internal banks:
–
DDR2 => 1, 2, 4, and 8
–
DDR3 => 1, 2, 4, and 8
–
mDDR => 1, 2, and 4
•
Supports 256, 512, 1024, and 2048-word page sizes
•
Supports burst length of 8 (sequential burst)
•
Write/read leveling/calibration and data eye training in conjunction with DID
•
Self Refresh and Power-Down modes for low power:
–
Flexible OCP to DDR address mapping to support Partial Array Self Refresh in LPDDR1, DDR2
and DDR3.
–
Temperature Controlled Self Refresh for LPDDR1 and DDR3 having on-chip temperature sensor.
•
Periodic ZQ calibration for DDR3
•
ODT on DDR2 and DDR3
•
Prioritized refresh scheduling
•
Programmable SDRAM refresh rate and backlog counter
•
Programmable SDRAM timing parameters
•
Big and little endian modes
400
Memory Subsystem
SPRUH73H – October 2011 – Revised April 2013
Copyright © 2011–2013, Texas Instruments Incorporated