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Electrical characteristics
STM32L162VC, STM32L162RC
54/123
DocID022881 Rev 10
6.3.3 Embedded
internal reference voltage
The parameters given in
are based on characterization results, unless otherwise
specified.
Table 16. Embedded internal reference voltage calibration values
Calibration value name
Description
Memory address
VREFINT_CAL
Raw data acquired at
temperature of 30 °C ±5 °C
V
DDA
= 3 V ±10 mV
0x1FF8 00F8 - 0x1FF8 00F9
Table 17. Embedded internal reference voltage
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
REFINT out
(1)
Internal reference voltage
– 40 °C < T
J
< +110 °C 1.202 1.224
1.242
V
I
REFINT
Internal reference current
consumption
-
-
1.4
2.3
µA
T
VREFINT
Internal reference startup time
-
-
2
3
ms
V
VREF_MEAS
V
DDA
and V
REF+
voltage during
V
REFINT
factory measure
-
2.99
3
3.01
V
A
VREF_MEAS
Accuracy of factory-measured V
REF
value
(2)
Including uncertainties
due to ADC and
V
DDA
/V
REF+
values
-
-
±5
mV
T
Coeff
Temperature coefficient
–40 °C < T
J
< +110 °C
-
25
100
ppm/°
C
A
Coeff
(3)
Long-term stability
1000 hours, T= 25 °C
-
-
1000
ppm
V
DDCoeff
Voltage coefficient
3.0 V < V
DDA
< 3.6 V
-
-
2000
ppm/V
T
S_vrefint
ADC sampling time when reading
the internal reference voltage
-
4
-
-
µs
T
ADC_BUF
(4)
Startup time of reference voltage
buffer for ADC
-
-
-
10
µs
I
BUF_ADC
Consumption of reference voltage
buffer for ADC
-
-
13.5
25
µA
I
VREF_OUT
VREF_OUT output current
(5)
-
-
-
1
µA
C
VREF_OUT
VREF_OUT output load
-
-
-
50
pF
I
LPBUF
Consumption of reference voltage
buffer for VREF_OUT and COMP
-
-
730
1200
nA
V
REFINT_DIV1
1/4 reference voltage
-
24
25
26
%
V
REFIN
T
V
REFINT_DIV2
1/2 reference voltage
-
49
50
51
V
REFINT_DIV3
3/4 reference voltage
-
74
75
76
1. Guaranteed by test in production.
2. The internal V
REF
value is individually measured in production and stored in dedicated EEPROM bytes.
3. Guaranteed by characterization results.
4. Shortest sampling time can be determined in the application by multiple iterations.