STMicroelectronics STM32F042C4, Manual

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STM32F042xx Electrical characteristics
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6.3.10 Memory characteristics
Flash memory
The characteristics are given at T
A
= –40 to 105 °C unless otherwise specified.
6.3.11 EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:

Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.

FTB : A Burst of Fast Transient voltage (positive and negative) is applied to V
DD
and
V
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 45 . They are based on the EMS levels and classes
defined in application note AN1709.
Table 43. Flash memory characteristics
Symbol Parameter Conditions Min Typ Max
(1)
1. Guaranteed by design, not tested in production.
Unit
t
prog
16-bit programming time T
A

–40 to +105 °C 40 53.5 60 μ s
t
ERASE
Page (1 KB) erase time T
A

–40 to +105 °C 20 - 40 ms
t
ME
Mass erase time T
A

–40 to +105 °C 20 - 40 ms
I
DD
Supply current
Write mode - - 10 mA
Erase mode - - 12 mA
Table 44. Flash memory endurance and data retention
Symbol Parameter Conditions Min
(1)
1. Data based on characterization results, not tested in production.
Unit
N
END
Endurance T
A
= –40 to +105 °C
10
kcycles
t
RET
Data retention
1 kcycle
(2)
at T
A
= 85 °C
2. Cycling performed over the whole temperature range.
30
Years 1 kcycle
(2)
at T
A
= 105 °C 10
10 kcycles
(2)
at T
A
= 55 °C 20