Southchip SC8913 EVM User Manual Download Page 9

                           

SC8913  EVM  USER  GUIDE

 

                     

SOUTHCHIP  SEMICONDUCTOR

 

SOUTHCHIP  CONFIDENTIAL

 

Copyright © 2018, Southchip Semiconductor Technology (Shanghai) Co., Ltd 

1.2

 

Other Settings

 

1.2.1

 

Loop compensation setting

 

COMP pin is used for loop compensation setting. R25=10kΩ and C28=22nF is suggested for typical application. 
Once loop instability occurs, R25 and C28 should be adjusted according to practical situation.   

 

1.2.2

 

MOSFET driver resistor setting

 

R9/R10 is driver resistor which connects LD/HD with LG/HG respectively on the EVM board. The default value 
of R9/R10 is 0 ohm. Increasing R9/R10 value will slow down switching speed and improve EMI  performance, 
but with the cost of decreased efficiency at the same time.

 

1.2.3

 

Power path management Q2/Q4 driver setting

 

Q2/Q4/Q1 is the power MOSFET used to control the power path. Q2’s driver signal is connected to GPO pin; 
Q4’s driver signal is connected to PGATE pin; Q1’s driver signal is connected to MicroB_drv pin(P5);

 

Through  I2C  interface,  Q4  and  Q2  can  be  controlled  by  0x0C<7>  (EN_PGATE)  and  0x0C<7>  (GPO_CTRL) 
respectively.  When  the  corresponding  setting  bit  is  1,  Q4/Q2  will  be  on.  Otherwise,  Q4/Q2  will  be  off. 
Specification description can be referred to 

SC8913

 datasheet.

 

1.2.4

 

Adapter Attachment/Detachment Detection 

 

MicroUSB  adapter  attachment/detachment  detection  is  realized  by  ACIN  pin.  When  chip  detects  adapter 
plug

-

in, it will set AC_OK interrupt bit, and INT pin will assert interrupt signal. Specification description can be 

referred to 

SC8913

 datasheet

 

1.2.5

 

Dithering function test configuration 

 

If switching frequency dithering function is tested, R17 should be removed and USB2 should disconnected. R15 
value is set to 0 ohm, PGATE/DITH pin will be used for frequency dithering.   

 

2.

 

Test Precautions   

1)

 

When MicroUSB is used as input port, MicroB_drv pin should be connected with VHI (right pin) to open 
MOS Q1.

 

2)

 

If power path function is not tested, USB interface can be always connected to VBUS port

battery can be 

connected to VBAT port. Chip operation mode can be changed by EN_OTG bit.   

 

3)

 

In  the  charging  mode,  USB  charges  the  battery  from  VBUS  to  VBAT;  in  the  reverse  discharging  mode, 
battery discharges power from VBAT to VBUS. 

 

4)

 

PSTOP pin should be floating or connected to ground to enable the power operation.

 

5)

 

SC8913 does not support starting up with CC mode electronic load. It’s suggested to start up with no load 
or CR mode electronic load. Load can’t be so heavy that exceeds the current limit of SC8913, or it can not 
start up normally.     

 

6)

 

After starting up, if the electronic load CC mode is used as the load, it should be noted that the CC load 
current  should  not  exceed  the  output  current  limit,  and  the  corresponding  input  current  should  not 
exceed the input  current  value. Otherwise, the CC  load will pull the output  voltage down directly. If CR 
mode  loading  is  used,  even  if  the  input  /  output  current  limit  occurs,  the  output  voltage  still  can  be 
stabilized at a balance point and will not be forced down.

 

Summary of Contents for SC8913 EVM

Page 1: ...SC8913 EVM USER GUIDE Southchip Semiconductor...

Page 2: ...FET Yes Support I2C interface Yes Support power path management Yes Smart detection function Yes ADC resolution 10 bits VBUS operation range in charging mode VBAT 25V support up to maximum 26V VBAT op...

Page 3: ...ed by external power if I2C tool is connected with computer the power will be provided by computer AGND is analog ground INT is interrupt signal P4 ADIN ADIN lies on the right pin of P4 ADIN is analog...

Page 4: ...VBUS is decided by external configuration the Rup and Rdown values marked with red color on the lower part of the interface should be filled according to the actual resistance on EVM In this way the v...

Page 5: ...y impendence compensation function no matter internal or external configuration Reg 0x00 7 6 IRCOMP is used to set compensation voltage So the real target voltage can be calculated as follow VBAT_cmp...

Page 6: ...ence voltage can be calculated as follow VBUSREF_I 4 x VBUSREF_I_SET VBUSREF_I_SET2 1 x 2 mV The recommended VBUS voltage range is from 3 5V to 25 6V When VBUS is lower than 10 24V it is suggested to...

Page 7: ...tor value IBUS_LIM A IBUS_LIM_SET 1 256 IBUS_RATIO 10 m RS1 RS1 value is 10m the default IBUS current limit is 3A 1 1 5 IBAT Current Limit setting IBAT current limit function is effective in both char...

Page 8: ...FB_VALUE set by Reg0x0F 7 0 VBAT_FB_VALUE2 set by Reg0x10 7 6 When Reg 0x08 1 VBAT_MON_RATIO 0 VBAT_MON_RATIO 12 5 default When Reg 0x08 1 VBAT_MON_RATIO 1 VBAT_MON_RATIO 5 For 1 2 cell application it...

Page 9: ...nterrupt bit and INT pin will assert interrupt signal Specification description can be referred to SC8913 datasheet 1 2 5 Dithering function test configuration If switching frequency dithering functio...

Page 10: ...10 100nF 100nF 25V GRM188R61E104KA01 Murata 5 C5 Capacitor X5R 0402 25V 10 100nF 100nF 25V GRM155R61E104KA87 Murata 1 C6 C7 POSCAP Solid electrolytic capacitor 6 3x11 25V 100uF 100uF 25V std std 2 C8...

Page 11: ...td std 1 P5 P6 P7 Header 3 Pin Header 3 std std 3 Q1 Q2 Q4 30V PMOS SOT23 55mohm 4 3A 30V 4 3A AO3401A AO3401 VS3407 A CJ3401A A O 3 Q3 NPN NMOS SOT23 2N7002 MMBT3904 NXP 1 R1 Metal resistor 1206 1W 1...

Page 12: ...UIDE SOUTHCHIP SEMICONDUCTOR SOUTHCHIP CONFIDENTIAL Copyright 2018 Southchip Semiconductor Technology Shanghai Co Ltd 12 4 PCB Layout SC8913 EVM board PCB layout is as follow Figure 4 Top Silkscreen F...

Page 13: ...SC8913 EVM USER GUIDE SOUTHCHIP SEMICONDUCTOR SOUTHCHIP CONFIDENTIAL Copyright 2018 Southchip Semiconductor Technology Shanghai Co Ltd 13 Figure 6 Mid Layer1 Figure 7 Mid Layer2...

Page 14: ...SC8913 EVM USER GUIDE SOUTHCHIP SEMICONDUCTOR SOUTHCHIP CONFIDENTIAL Copyright 2018 Southchip Semiconductor Technology Shanghai Co Ltd 14 Figure 8 Bottom Layer Figure 9 Bottom Silkscreen...

Page 15: ...p Semiconductor Technology Shanghai Co Ltd 15 5 Tested Data and Waveform 5 1 VBUS Output Voltage Ripple in Discharging Mode fsw 300kHz L 2 2uH RS1 10mR RS2 5mR COMP 10k 22nF VBAT 3 6V VBUS 5V IBUS 0A...

Page 16: ...ging Mode fsw 300kHz L 2 2uH RS1 10mR RS2 5mR COMP 10k 22nF Loop bit 1 VBAT 3 6V VBUS 5V IBUS 0A 3A Slew Rate 1A uS VBUS 9V IBUS 0A 2A Slew Rate 1A uS VBUS 12V IBUS 0A 1 5A Slew Rate 1A uS 5 3 VBUS Vo...

Page 17: ...nology Shanghai Co Ltd 17 IBUS 0A VBUS 5 12V Slew Rate 8mV uS IBUS 0A VBUS 12 5V Slew Rate 8mV uS 5 4 Current Limit Accuracy in Charging Discharging mode fsw 300kHz L 2 2uH RS1 10mR RS2 5mR COMP 10k 2...

Page 18: ...AT 4 2V VBUS 5V 9V 12V VBAT 3 6V VBUS 5V 9V 12V VBAT 3 0V VBUS 5V 9V 12V 5 6 Supply Current fsw 300kHz L 2 2uH RS1 10mR RS2 5mR COMP 10k 22nF VBAT 3 6V Test Condition Test Result PSTOP 3 3V VBUS float...

Page 19: ...ging Mode fsw 300kHz L 2 2uH RS1 10mR RS2 5mR COMP 10k 22nF VBAT 3 6V Test Condition Test Result VBUS 5V IBUS 3A Temperature rise of IC surface T_RISE 13 C VBUS 9V IBUS 2A Temperature rise of IC surfa...

Page 20: ..._LIM 2A EOC_SET 0 IBUS_EOC 0 231A 11 5 IBUS_LIM Recharge voltage threshold VBUS 12V Set VBAT_TARGET 4 2V VBAT_RECHRG 4 01V 95 5 VBAT_TARGET Battery over voltage threshold VBUS 5V Set VBAT_TARGET 4 2V...

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