4
English
DRAM Timing Setting
Options are in its sub-menu.
Press <Enter> to enter the sub-menu of detailed options.
CAS Latency Time
When synchronous DRAM is installed, the number of clock cycles of
CAS latency depends on the DRAM timing. Don't change this field from
the default value specified by the system designer.
The Choice: Auto,3,4,5 or 6.
DRAM RAS# to CAS# Delay
This field lets you insert a timing delay between the CAS and RAS
strobe signals, and you can use it when DRAM is written to, read
from, or refreshed. Faster performance is gained in high speed, more
stable performance, in low speed. This field is applied only when syn-
chronous DRAM is installed in the system.
The Choice: Auto,3,4,5 or 6.
DRAM RAS# Precharge
If an insufficient number of cycles is allowed for the RAS to accumulate
its charge before DRAM refresh, the refresh may be-incompleted, and the
DRAM may fail to retain data. Fast gives faster performance; and Slow
gives more stable performance. This field is applied only when synchro-
nous DRAM is installed in the system.
The Choice: Auto,3,4,5 or 6.
Precharge dealy (tRAS)
The precharge time is the number of cycles it takes for DRAM to accu-
mulate its charge before refresh.
The Choice: Auto or 9~8.
Write Recovery Time
This item allows you to set the Write Recovery Time.
The Choice: Auto or 3~5.
Refresh Command Period
This item allows you to set the Refresh Command Period.
The Choice: Auto,20,25,30,35 or 42.
Write to Read Delay
This item allows you to set the Write to Read Delay.
The Choice: Auto or 4~5.
