37
3.11 Wiring diagram of Demodulator
1
1
2
2
3
3
4
4
D
D
C
C
B
B
A
A
TS
2-
D
0
TS
_V
LD
_D
EMO
TS
_SYN
C
_D
EMO
TS_
VLD
_D
EM
O
TS_
SYN
C_D
EM
O
T2
_I
F_
AG
C
XT
A
L_
IN
XT
A
L_
O
U
T
I2C
-S
DA_
DE
MO
TS
_D
6
I2
C
-SC
L_
D
EMO
IP
_T
IM_
T
IP
_S
IM_
S
TS
_D
7
TS_
D5
TS_
D4
TS_
D3
TS_
D2
TS_
D1
TS_
D0_
DEM
O
TS
_C
LK
_D
EMO
XT
A
L_
O
U
T
XT
A
L_
IN
T2
_I
F_
AG
C
IP
_T
IM_
T
MSPI
_C
SZ
MSPI
_D
O
MSPI
_D
I
MSPI
_C
LK
S
_I
F_
AG
C
MSPI
_W
P
MSPI
_C
LK
MSPI
_C
SZ
MSPI
_D
I
MSPI
_D
O
TS_
ER
R
Con
fig
ure
S-I
F-AG
C
S
_I
F_
AG
C
QP_
S
QM
_S
DIS
EQ
_O
UT1
TS
_ER
R
C
on
fig
ure
D
ISEQ
_O
U
T1
+3
.3
V
_D
EM
O
+3
.3
V
_D
EM
O
+1
.1
5V
_D
EM
O
+3
.3
V
_D
EM
O
+1
.1
5V
_D
EM
O
+3
.3
V
_D
EM
O
+1
.1
5V
_D
EMO
+3
.3
V
_D
EMO
+3
.3
V
_D
EM
O
+3
.3
V
_D
EMO
+3
.3
V
_D
EM
O
+1
.1
5V
_D
EM
O
+3
.3
V
_D
EMO
+3
.3
V
_D
EMO
+3
.3
V
_D
EMO
+3
.3
V
_D
EM
O
I2
C
s
la
ve
a
dd
re
ss
:
TS
_E
R
R
=0
, I
2C
s
la
ve
a
dd
re
ss
=0
xD
2
TS
_E
R
R
=1
, I
2C
s
la
ve
a
dd
re
ss
=0
xF
2
如果
TS
_E
R
R
(P
IN
24
)
悬空
,
默认为上拉
则
ad
dr
es
s=
0x
F2
。
Fo
r
M
S
B
14
00
,
m
us
t u
se
X
ta
l t
ur
bo
m
od
e,
p
in
19
=1
(D
ef
au
lt
w
ith
in
te
rn
al
p
ul
l-u
p)
Fo
r
M
S
B
10
1X
,
C
O
N
N
E
C
T
3.
3V
CT
36
0.
1u
F-
04
02
-X
5R
-±
20
%-
16
V
CT
37
0.
1u
F-
04
02
-X
5R
-±
20
%-
16
V
CT
38
0.
1u
F-
04
02
-X
5R
-±
20
%-
16
V
CT
39
0.
1u
F-
04
02
-X
5R
-±
20
%-
16
V
CT
40
0.
1u
F-
04
02
-X
5R
-±
20
%-
16
V
CT
41
0.
1u
F-
04
02
-X
5R
-±
20
%-
16
V
CT
48
0.
1u
F-
04
02
-X
5R
-±
20
%-
16
V
CT
49
0.
1u
F-
04
02
-X
5R
-±
20
%-
16
V
CT
50
0.
1u
F-
04
02
-X
5R
-±
20
%-
16
V
CT
64
10
uF
-0
60
3-
X
5R
-±
20
%-
6.
3V
+3
.3
V
_T
U
N
ER
G
N
D
CT
65
0.
1u
F-
04
02
-X
5R
-±
20
%-
16
V
PO
K
1
V
EN
2
V
IN
3
V
PP
4
N
C
5
V
O
6
A
D
J
7
G
N
D
8
EP
A
D
9
RT
90
59
UT
5
LD
O‚¯
rG
,I
C
LD
O,
3A
,A
DJ
,5
.5
V,
SO
P-
8,
SM
D,
RT
90
59
GS
P,
Ri
ch
te
k
G
N
D
G
N
D
G
N
D
RT
20
10
K
oh
m
-0
40
2-
±5
%-
1/
16
W
CT
61
1u
F-
04
02
-X
5R
-±
20
%-
16
V
CT
59
10
uF
-0
60
3-
X
5R
-±
20
%-
6.
3V
G
N
D
CT
62
1u
F-
04
02
-X
5R
-±
20
%-
16
V
CT
58
1u
F-
04
02
-X
5R
-±
20
%-
16
V
5V
_M
+1
.1
5V
_D
EMO
5V
_M
G
N
D
CT
60
10
uF
-0
60
3-
X
5R
-±
20
%-
6.
3V
RT
21
2K
oh
m
-0
40
2-
±1
%-
1/
16
W
RT
22
4K
7o
hm
-0
40
2-
±1
%-
1/
16
W
CT
21
33
pF
-0
40
2-
N
PO
-±
5%-
50
V
CT
42
33
pF
-0
40
2-
N
PO
-±
5%-
50
V
Y
T3
24
MH
z-
±2
0P
PM
-2
0P
F-
H
C-
49
S-
SMD
RT
11
0o
hm
-0
40
2-
±5
%-
1/
16
W
RT
8
1Mo
hm
-0
40
2-
±5
%-
1/
16
W
RT
16
0o
hm
-0
40
2-
±5
%-
1/
16
W
RT
15
10
K
oh
m
-0
40
2-
±5
%-
1/
16
W
CT
45
0.
02
2u
F-
04
02
-X
7R
-±
10
%-
16
V
CT
57
0.
02
2u
F-
04
02
-X
7R
-±
10
%-
16
V
RT
19
0o
hm
-0
40
2-
±5
%-
1/
16
W
RT
18
10
K
oh
m
-0
40
2-
±5
%-
1/
16
W
RT
23
N
C/
0o
hm
-0
40
2-
±5
%-
1/
16
W
RT
17
N
C/
10
K
oh
m
-0
40
2-
±5
%-
1/
16
W
RT
24
N
C/
10
K
oh
m
-0
40
2-
±5
%-
1/
16
W
RT
9
N
C/
10
K
oh
m
-0
40
2-
±5
%-
1/
16
W
CT
43
N
C/
10
uF
-0
60
3-
X
5R
-±
20
%-
6.
3V
RT
14
10
K
oh
m
-0
40
2-
±5
%-
1/
16
W
CT
44
0.
1u
F-
04
02
-X
5R
-±
20
%-
16
V
TS
_C
LK
_D
EMO
TS
_D
0_
D
EMO
D
emo
d_
R
ST
RT
25
0o
hm
-0
40
2-
±5
%-
1/
16
W
RT
33
22
oh
m
-0
40
2-
±5
%-
1/
16
W
CT
63
N
C/
10
pF
-0
40
2-
N
PO
-±
5%-
50
V
DIS
EQ
C_O
UT1
16
QM
_S
15
QP_
S
14
MS
PI
_C
SZ
/S
SP
I_
CL
K
33
GN
D
46
I2C
M_S
CL
20
I2C
M_S
DA
21
V
D
D
25
GN
D
18
VD
D33
23
DIS
EQ
C_I
N1/
TS_
ER
R
24
VD
D
17
RE
SE
TZ
29
G
N
D
30
GPI
O[0
]
19
MS
PI
_C
LK
/S
SP
I_
CS
Z
28
MS
PI
_D
I/S
SP
I_
D
O
31
IF
A
G
C_
F
7
G
N
D
26
V
D
D
33
27
IF
A
G
C_
S
6
TS
_C
LK
34
TS
_D
[7
]
35
TS
_D
[6
]
36
TS_
D[5
]
37
TS_
D[4
]
38
TS_
D[3
]
39
TS_
D[2
]
40
TS_
D[1
]
41
TS_
D[0
]
42
TS_
VLD
43
TS_
SY
NC
44
VD
D33
45
GN
D
22
VD
D
47
I2C
S_S
DA
48
I2
CS
_S
CL
1
G
N
D
2
X
TA
L_
O
U
T
3
X
TA
L_
IN
4
A
V
D
D
33
5
G
N
D
10
MS
PI
_D
O
/S
SP
I_
D
I
32
IP
_T
8
IM_
T
9
IP
_S
11
IM_
S
12
AV
DD
33
13
U
T3
D
emo
芯片
,IC
D
emo
,D
VB
-T
/T
2/
S/
S2
/C
,L
Q
FP
,S
MD
,MS
B
10
2K
A
,Ms
ta
r
TS
_D
0
TS
2-VL
D
TS
_V
LD
TS
2-SYN
C
TS
_SYN
C
RT
26
N
C/
0o
hm
-0
40
2-
±5
%-
1/
16
W
RT
27
N
C/
0o
hm
-0
40
2-
±5
%-
1/
16
W
RT
29
N
C/
0o
hm
-0
40
2-
±5
%-
1/
16
W
RT
28
0o
hm
-0
40
2-
±5
%-
1/
16
W
RT
30
0o
hm
-0
40
2-
±5
%-
1/
16
W
TS
_C
LK
TS
2-
C
LK
RT
31
0o
hm
-0
40
2-
±5
%-
1/
16
W
RT
32
N
C/
0o
hm
-0
40
2-
±5
%-
1/
16
W
LT
10
磁珠
,B
EA
D
,1
20
oh
m
,0
40
2,
50
0m
A
,S
MD
,T
P,
FC
M1
00
5K
F-
12
1T
06
,T
ai
-te
ch
+3
.3
V
_D
EMO
G
N
D
G
N
D
IF
_P
IF
_N
CT
66
0.
1u
F-
04
02
-X
5R
-±
20
%-
16
V
CT
67
0.
1u
F-
04
02
-X
5R
-±
20
%-
16
V
CT
54
56
pF
-0
40
2-
N
PO
-±
5%-
50
V
CT
68
56
pF
-0
40
2-
N
PO
-±
5%-
50
V
IF
_AG
C
RT
53
10
0o
hm
-0
40
2-
±5
%-
1/
16
W
RT
52
10
0o
hm
-0
40
2-
±5
%-
1/
16
W
CT
10
30
pF
-0
40
2-
N
PO
-±
5%-
50
V
CT
12
30
pF
-0
40
2-
N
PO
-±
5%-
50
V
G
N
D
G
N
D
I2
C
-S
D
A
I2
C
-S
C
L
I2
C
-S
D
A_
D
EMO
I2
C
-S
C
L_
D
EMO
RT
41
22
oh
m
-0
40
2-
±5
%-
1/
16
W
RT
3
G
Z1
00
5U
10
2C
TF
(1
00
0o
hm
-3
00
m
A
)
RT
38
G
Z1
00
5U
10
2C
TF
(1
00
0o
hm
-3
00
m
A
)
RT
39
10
0o
hm
-0
40
2-
±5
%-
1/
16
W
RT
40
10
0o
hm
-0
40
2-
±5
%-
1/
16
W
TU
NE
R_S
CL
TU
NE
R_S
DA
CT
51
N
C/
0.
1u
F-
04
02
-X
5R
-±
20
%-
16
V
CT
53
N
C/
0.
1u
F-
04
02
-X
5R
-±
20
%-
16
V
CT
55
N
C/
0.
1u
F-
04
02
-X
5R
-±
20
%-
16
V
CT
56
N
C/
0.
1u
F-
04
02
-X
5R
-±
20
%-
16
V
CS
#
1
SO
2
WP
#
3
G
N
D
4
SI
5
SC
LK
6
H
O
LD
#
7
V
cc
8
U
T4
SP
I F
LA
SH
芯片
,IC
S
PI
F
LA
SH
,4
Mb
,S
O
IC
8,
SMD
,K
H
25
L4
00
6E
M1
I-
12
G
,K
H