USA
tel: +1-408-801-1000
fax: +1-408-801-8657
Japan
tel: +81-3-5423-8101
fax: +81-3-5423-8102
Taiwan
tel: +886-2-2515-2522
fax: +886-2-2515-2295
China
tel: +86-755-83485218
fax: +86-755-83485418
Korea
tel: +82-2-3452-9079
fax: +82-2-3452-9145
Europe
tel: +46-8-6211-367
fax: +46-8-6211-369
Rest of the World
tel: +972-9-764-5000
fax: +972-3-548-8666
For more information, please
visit www.sandisk.com.
SanDisk and the SanDisk logo are trademarks of SanDisk Corporation, registered in the United States and other countries.
iNAND is a trademark of SanDisk Corporation. SD, microSD, microSDHC, miniSDHC are trademarks. Memory Stick Micro M2
and Memory Stick Pro Duo marks and logos are trademarks of Sony Corporation. Other brand names mentioned herein are for
identifi cation purposes only and may be trademarks of their respective holder(s).
©2008 SanDisk Corporation. All rights reserved. 10/08 80-11-01500 rev. 1
Stacking capabilities allow for ca-
pacities as high as 16GB* in SanDisk
microSDHC and Memory Stick Micro
M2 cards. They enable handsets to
become increasingly functional, sleek
and fl exible in design support.
Design in More with iNAND
Embedded Flash Drives
The SanDisk family of fi eld-proven
high-capacity iNAND EFDs delivers
high performance, reliability and low
power
consumption for multimedia hand-
sets. Count on SanDisk advanced,
MLC NAND fl ash technology for cost-effective data
and code storage. An internal fl ash controller and
embedded fi rmware, utilizing SanDisk system
know-how, make iNAND more reliable and ease the
transition to new fl ash technologies.
SanDisk fl ash management software
is embedded inside SanDisk EFDs,
enabling them to emulate a standard
hard disk drive and serve as a boot
device, while ensuring MLC NAND
reliability. Robust fl ash error detection
and correction, automated bad block management
and advanced wear-leveling algorithms deliver de-
vice reliability, endurance and data retention.
The SanDisk family of iNAND EFDs
comes in a range of capacities and
confi gurations that support both the
eSD and eMMC standard interfaces,
including high-capacity, discrete MLC
NAND fl ash and multi-chip package
(MCP) confi gurations with low-power DRAM. They
enable seamless migration to future designs, and
scalable storage of up to 16GB.
* 1 gigabyte (GB) = 1 billion bytes; 1 megabyte (MB) = 1 million bytes; speed based on internal testing; performance may be
lower depending on host device. Some capacity not available for data storage.
