CompactFlash Memory Card Product Manual
SanDisk CompactFlash Memory Card Product Manual © 1998 SANDISK CORPORATION
28
4.3
Electrical Specification
The
following
table
defines
all
D.C.
Characteristics for the CompactFlash Memory
Card Series.
Unless otherwise stated, conditions are:
SDCFB-XX
SDCFBI-XX
Vcc = 5V ±10%
Vcc = 5V ± 5%
Vcc = 3.3V ± 5%
Vcc = 3.3V ± 5%
Ta = 0°C to 60°C
Ta = -40°C to 85°C
Absolute Maximum
conditions are:
Vcc = -0.3V min. to 7.0V max.
V* = -0.5V min. to Vcc + 0.5V max.
* Voltage on any pin except Vcc with respect
to GND.
4.3.1
Input Leakage Current
Note:
In the table below, x refers to the characteristics described in section 4.3.2. For example, I1U indicates a
pull up resistor with a type 1 input characteristic.
Type
Parameter
Symbol
Conditions
M I N
TYP
MAX
Units
IxZ
Input Leakage Current
IL
Vih = Vcc / Vil = Gnd
-1
1
µA
IxU
Pull Up Resistor
RPU1
Vcc = 5.0V
50k
500k
Ohm
IxD
Pull Down Resistor
RPD1
Vcc = 5.0V
50k
500k
Ohm
Note:
The minimum pullup resistor leakage current meets the PCMCIA specification of 10k ohms but is
intentionally higher in the CompactFlash Memory Card Series product to reduce power use.
4.3.2
Input Characteristics
Type
Parameter
Symbol
M I N
TYP
MAX
M I N
TYP
MAX
Units
VCC = 3.3 V
VCC = 5.0 V
1
Input Voltage
CMOS
Vih
Vil
2.4
0.6
2.4
0.8
Volts
2
Input Voltage
CMOS
Vih
Vil
1.5
0.6
2.0
0.8
Volts
3
Input Voltage
CMOS
Schmitt Trigger
Vth
Vtl
1.8
1.0
2.8
2.0
Volts
