Samsung SR-606EV, Service Manual

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64 Samsung Electronics
KSR1005
NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING APPLICATION
(Bias Resistor Built In)
•
Switching Circuit, Inverter, Interface circuit Driver circuit.
•
Built in bias Resistor (R,=4.7K
Ω
, R=10K
Ω
)
•
Complement to KSR2005
ABSOLUTE MAXIMUM RATINGS (T
a
=25
˚c
)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CBO
V
CBO
I
C
P
C
T
I
T
stg
Rating
50
50
10
100
300
150
-55-150
Unit
V
V
V
mA
mW
˚C
˚C
ELECTRICAL CHARACTERISTICS (T
a
=25
˚C
)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth Product
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
Symbol
BV
CBO
BV
CBO
I
CBO
H
C
V
CE(sat)
C
ob
F
r
Vi
(off)
Vi
(off)
R
1
R
1
/R
2
Test Condition
I
C
=10µA, I
B
=0
I
C
=100µA, I
B
=0
V
CB
=40V, I
B
=0
V
CB
=5V, I
B
=5mA
I
C
=10mA, I
B
=0.5mA
V
CB
=10V, I
B
=0
t=1MHz
V
CB
=10V, I
C
=5mA
V
CB
=5V, I
C
=100µA
V
CB
=0.3V, I
C
=20mA
Main
50
50
30
0.3
3.2
0.42
Typ
3.7
250
4.7
0.47
Max
0.1
0.3
2.5
6.2
0.52
Unit
V
V
µ
A
V
pF
MHz
V
V
K
Ω
Equivalent Circuit
TO-92
1 Emitter 2 Collector 3 Base