Samsung S5PC110, Manual

Page: 2013 / 2426

S5PC110_UM 1 ELECTRICAL DATA
1-6
1.3 D.C. ELECTRICAL CHARACTERISTICS
The entire DC characteristics listed in
Table 1-3
for each pin include input sense levels, output drive levels, and
currents.
Use these parameters to determine maximum DC loading and to determine maximum transition times for a given
load.
Table 1-3
shows the DC operating conditions for the high- and low-strength input, output, and I/O pins.
Table 1-3 I/O DC Electrical Characteristics
VDD = 1.65V~3.60V, Tj = -25 to 85
°
C (Junction temperature)
Parameter Condition Minimum Typical Maximum Unit
VDD Power Off 3.6 V
VDD=3.
3V
3.6
Vtol Tolerant external voltage**
VDD
Power
On
VDD=1.
8V
3.6
V
High Level Input Voltage
Vih
LVCMOS Interface 0.7VDD VDD V
Low Level Input Voltage
Vil
LVCMOS Interface 0 0.3VDD V
Δ V Hysteresis Voltage 0.1VDD V
High Level Input Current
Input Buffer -10 10 uA
Iih
Input Buffer with pull-down
Vin=VDD
(VDD=min)
45
(1)
uA
Low Level Input Current
Input Buffer -10 10 uA
Iil
Input Buffer with pull-up
Vin=VSS (Vss=min)
-45
(1)
uA
Voh
Output high voltage
(2)
Driver Strength 0.8xVDD V
Vol
Output Low voltage
(2)
Driver Strength 0.2xVDD V
Ioz
Tri-State Output Leakage
Current
Vout=VSS or VDD -10 10 uA
CIN Input capacitance
Any input and
Bidirectional buffers
5 pF
COUT Output capacitance Any output buffer 5 pF
NOTE:
1. The values of Ioh & Iol are valid only for 3.3V range.
2. The value of IOH and IOL is for min. driver strength.