S3F84B8_UM_REV 1.00
21 ELECTRICAL DATA
21-11
Table 21-10 LVR Circuit Characteristics
(T
A
= 25
C, V
DD
= 1.8V to 5.5V)
Parameter
Symbol
Conditions
Minimum
Typical
Maximum
Unit
Low voltage reset
V
LVR
– 1.8
2.1
2.8
3.4
3.7
1.9
2.3
3.0
3.6
3.9
2.0
2.5
3.2
3.8
4.1
V
V
DD
V
LVR,MAX
(Reset when the voltage decreases )
V
LVR
V
LVR,MIN
chip starts working when the voltage increases )
Figure 21-5 LVR Reset Timing
Table 21-11 Flash Memory AC Electrical Characteristics
(T
A
= –40
C to + 85
C at V
DD
= 1.8V to 5.5V)
Parameter
Symbol
Conditions
Minimum
Typical
Maximum
Unit
Flash Erase/Write/Read voltage
Fewrv
V
DD
1.8 5.0 5.5 V
Ftp 20
–
30
uS
Ftp1 32
–
70
mS
Sector erasing time
Ftp2
4 – 12
mS
Data access time
FtRS
V
DD
= 2.0V
– 250 – nS
Number of writing/erasing
FNwe
–
10,000
–
–
Times
Data retention
Ftdr
–
10
–
–
Years
NOTE:
1. Programming time specifies the time during which one byte (8-bit) is programmed.
2. Chip erasing time specifies the time during which the entire program memory is erased.
3. Sector erasing time specifies the time during which the 128 byte block is erased.
4. Chip erasing is available in Tool Program mode only.