MuxOneNAND2G(KFM2G16Q2A-DEBx)
- 6 -
FLASH MEMORY
MuxOneNAND4G(KFN4G16Q2A-DEBx)
1.4 Product Features
Device Architecture
•
Design Technology:
•
Supply Voltage:
•
Host Interface:
•
5KB Internal BufferRAM:
•
SLC NAND Array:
Device Performance
•
Host Interface Type:
•
Programmable Burst Read Latency:
•
Multiple Sector Read/Write:
•
Multiple Reset Modes:
•
Multi Block Erase:
•
Low Power Dissipation:
•
Reliability
System Hardware
•
Voltage detector generating internal reset signal from Vcc
•
Hardware reset input (RP)
•
Data Protection Modes
•
User-controlled One Time Programmable(OTP) area
•
Internal 2bit EDC / 1bit ECC
•
Internal Bootloader supports Booting Solution in system
•
Handshaking Feature
•
Detailed chip information
Packaging
•
2G products
•
4G DDP products
A die
1.8V (1.7V ~ 1.95V)
16 bit
1KB BootRAM, 4KB DataRAM
(2K+64)B Page Size, (128K+4K)B Block Size
Synchronous Burst Read
- Up to 83MHz clock frequency
- Linear Burst 4-, 8-, 16-, 32-words with wrap around
- Continuous 1K words Sequential Burst
Synchronous Burst Block Read
- Up to 83MHz clock frequency
- Linear Burst 4-, 8-, 16-, 32-, 1K-words with no-wrap
- Continuous (1K words) 64 Page Sequential Burst
Synchronous Write
- Up to 83MHz clock frequency
- Linear Burst 4-, 8-, 16-, 32-, 1K-words with wrap around
- Continuous 1K words Sequential Burst
Asynchronous Random Read
- 76ns access time
Asynchronous Random Write
Latency 3,4(Default),5,6 and 7.
1~40Mhz : Latency 3 available
1~66Mhz : Latency 4,5,6 and 7 available
Over 66Mhz : Latency 6,7 available.
Up to 4 sectors using Sector Count Register
Cold/Warm/Hot/NAND Flash Core Resets
up to 64 Blocks
Typical Power,
- Standby current : 10uA (Single)
- Synchronous Burst Read current(66MHz/83MHz, single) : 20/25mA
- Synchronous Burst Write current(66MHz/83MHz, single) : 20/25mA
- Load current : 30mA
- Program current : 25mA
- Erase current : 20mA
- Multi Block Erase current : 20mA
- Data retention 10year after 10K Program/Erase Cycles
- Data retention 1year after 100K Program/Erase Cycles
- Write Protection for BootRAM
- Write Protection for NAND Flash Array
- Write Protection during power-up
- Write Protection during power-down
- INT pin indicates Ready / Busy
- Polling the interrupt register status bit
- by ID register
63ball, 10mm x 13mm x max 1.0mmt , 0.8mm ball pitch FBGA
63ball, 10mm x 13mm x max 1.2mmt , 0.8mm ball pitch FBGA
