Renesas HSG2005 Specifications Download Page 2

HSG2005 

Rev.4.00  Jun 21, 2006  page 2 of 12 

 

Electrical Characteristics 

(Ta = 25°C) 

Item Symbol 

Min 

Typ 

Max 

Unit 

Test 

Conditions 

DC current transfer ratio 

h

FE

 150 220 300 

 

V

CE

 = 3 V, I

C

 = 100 mA 

Reverse Transfer Capacitance 

C

re

 

 

 0.4 pF 

V

CB

 = 3 V, I

E

 = 0, f = 1 MHz,

emitter grounded 

Transition Frequency 

f

T

 

 28.5 

 GHz 

V

CE

 = 3 V, I

C

 = 100 mA, 

f = 1 GHz 

Maximum Stable Gain 

MSG 

10.5 

12.5 

 dB 

V

CE

 = 3 V, I

C

 = 100 mA, 

f = 5.8 GHz 

Maximum Available Gain 

MAG 

 17.0 

 dB 

V

CE

 = 3 V, I

C

 = 100 mA, 

f = 2.4 GHz 

Maximum Available Gain 

MAG 

 9.0 

 dB 

V

CE

 = 3 V, I

C

 = 100 mA, 

f = 5.8 GHz 

Power Gain 

PG 

 8.0 

 dB 

V

CE

 = 3.6 V, I

idle

 = 100 mA, 

f = 5.8 GHz, Pin = +13 dBm 

1dB Compression Point at output 

P1dB 

 +21 

 dBm 

V

CE

 = 3.6 V, I

idle

 = 100 mA, 

f = 5.8 GHz 

Saturation Output Power 

Po(sat) 

 +23 

 dBm 

V

CE

 = 3.6 V, I

idle

 = 100 mA, 

f = 5.8 GHz, Pin = +13 dBm 

 

Main Characteristics 

0

50

100

150

200

Collector Power Dissipation Pc

*   (mW)

Collector Power Dissipation Curve

Ambient Temperature    Ta  (°C)

1800

1200

600

*(4 x 4 x 1mm) on PCB

 

Summary of Contents for HSG2005

Page 1: ...Outline Renesas Package code PWQN0008ZA A Package name HWQFN 8 TNP 8TV 1 Collector 2 Collector 3 Collector 4 Emitter 5 Emitter 6 Base 7 Emitter 8 Emitter 9 Emitter 1 3 7 6 5 2 4 8 9 1 3 7 6 5 2 4 8 9...

Page 2: ...12 5 dB VCE 3 V IC 100 mA f 5 8 GHz Maximum Available Gain MAG 17 0 dB VCE 3 V IC 100 mA f 2 4 GHz Maximum Available Gain MAG 9 0 dB VCE 3 V IC 100 mA f 5 8 GHz Power Gain PG 8 0 dB VCE 3 6 V Iidle 10...

Page 3: ...al Transfer Characteristics 200 0 1 10 1000 Collector Current IC mA DC Current Transfer Ratio h FE DC Current Transfer Ratio vs Collector Current 300 100 Reverse Transfer Capacitanse C re pF Reverse T...

Page 4: ...parameter dB S parameter vs Frequency 2 0 3 5 30 10 40 0 10 20 20 1 5 3 0 4 0 2 5 1 0 Frequency f GHz S parameter dB S parameter vs Frequency 2 0 3 5 30 S21 S22 S12 S11 VCE 3 6 V IC 50 mA S21 S22 S12...

Page 5: ...5 7 8 6 4 Frequency f GHz S parameter dB S parameter vs Frequency 20 0 20 40 40 40 0 40 20 60 Input Power Pin dBm 3rd Order Intermodulation Distortion IMD3 50 20 30 10 10 30 VCE 3 6 V Iidle 100 mA f...

Page 6: ...3 4 5 1 5 10 0 30 60 90 120 150 180 150 90 60 30 120 30 60 90 120 150 180 150 90 60 30 120 10 5 4 3 2 1 5 1 8 2 3 4 5 10 6 4 2 0 2 4 6 8 1 1 5 2 4 6 8 1 2 3 4 5 1 5 10 Scale 20 div Scale 0 04 div Cond...

Page 7: ...3 4 5 1 5 10 0 30 60 90 120 150 180 150 90 60 30 120 30 60 90 120 150 180 150 90 60 30 120 10 5 4 3 2 1 5 1 8 2 3 4 5 10 6 4 2 0 2 4 6 8 1 1 5 2 4 6 8 1 2 3 4 5 1 5 10 Scale 20 div Scale 0 04 div Cond...

Page 8: ...3 4 5 1 5 10 0 30 60 90 120 150 180 150 90 60 30 120 30 60 90 120 150 180 150 90 60 30 120 10 5 4 3 2 1 5 1 8 2 3 4 5 10 6 4 2 0 2 4 6 8 1 1 5 2 4 6 8 1 2 3 4 5 1 5 10 Scale 20 div Scale 0 04 div Cond...

Page 9: ...0 816 154 0 4 74 60 74 0 0324 54 5 0 583 176 9 2100 0 814 152 3 4 49 59 29 0 0335 54 4 0 584 177 3 2200 0 817 150 8 4 28 57 89 0 0350 53 9 0 586 177 7 2300 0 820 149 5 4 08 56 76 0 0364 53 1 0 587 178...

Page 10: ...0 0 814 154 1 4 79 60 66 0 0323 54 4 0 578 176 5 2100 0 813 152 4 4 55 59 20 0 0335 54 6 0 579 176 9 2200 0 816 150 9 4 33 57 79 0 0348 54 0 0 581 177 3 2300 0 819 149 6 4 12 56 67 0 0362 53 4 0 582 1...

Page 11: ...0 0 813 154 1 4 83 60 60 0 0324 54 4 0 573 176 1 2100 0 812 152 5 4 58 59 13 0 0335 54 2 0 575 176 6 2200 0 814 150 9 4 36 57 72 0 0348 54 2 0 577 177 0 2300 0 818 149 7 4 16 56 58 0 0365 53 4 0 578 1...

Page 12: ...5 0 60 7 3 2 ZD Z E C0 15 1 e A S B S y1 P HWQFN8 2x2 0 65 PWQN0008ZA A TNP 8TV 0 009g MASS Typ RENESAS Code JEITA Package Code Previous Code Package Name HWQFN 8 Ordering Information Part Name Quanti...

Page 13: ...loss resulting from the information contained herein 5 Renesas Technology Corp semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which...

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