Rev.4.00 Jun 21, 2006 page 1 of 12
HSG2005
SiGe HBT
High Frequency Medium Power Amplifier
REJ03G0485-0400
Rev.4.00
Jun 21, 2006
Features
•
High Transition Frequency
f
T
= 28.5 GHz typ.
•
Low Distortion and Excellent Linearity
P1dB at output = +21 dBm typ. f = 5.8 GHz
•
High Collector to Emitter Voltage
V
CEO
= 5 V
•
Ideal for 2 GHz, 5 GHz Band applications. e.g. WLAN, Digital cordless phone.
Outline
Renesas Package code: PWQN0008ZA-A
(Package name: HWQFN-8 <TNP-8TV>)
1. Collector
2. Collector
3. Collector
4. Emitter
5. Emitter
6. Base
7. Emitter
8. Emitter
9. Emitter
1
3
7
6
5
2
4
8
9
1
3
7 6
5
2
4
8
9
2005
Note:
Marking is “2005”.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol
Ratings
Unit
Collector to base voltage
V
CBO
12
V
Collector to emitter voltage
V
CEO
5
V
Emitter to base voltage
V
EBO
1.2
V
Collector current
I
C
400 mA
Collector power dissipation
Pc
1.2
Note
W
Junction temperature
Tj
150
°
C
Storage temperature
Tstg
–55 to +150
°C
Note: Value on PCB (40 x 40 x 1.0 mm)
