Rev.1.00, Apr.12.2004, page 1 of 37
HSG1002
SiGeHBT
High Frequency Low Noise Amplifier
REJ03G0196-0100Z
Rev.1.00
Apr.12.2004
Features
•
High power gain and low noise figure ;
•
MSG = 21 dB typ. , NF = 0.7 dB typ. at V
CE
= 2 V,I
C
= 5 mA, f = 1.8 GHz
MSG = 20 dB typ. , NF = 0.8 dB typ. at V
CE
= 2 V,I
C
= 5 mA, f = 2.4 GHz
MSG = 16 dB typ. , NF = 1.2 dB typ. at V
CE
= 2 V,I
C
= 10 mA, f = 5.8 GHz
•
Transition Frequency
f
T
= 38 GHz typ. at f = 1 GHz
•
V
CEO
= 3.5 V
•
Ideal for 2.4 GHz / 5 GHz Band WLAN and Cordless phone applications.
Outline
1
2
3
4
1. Emitter
2. Collector
3. Emitter
4. Base
MFPAK-4
VE-
1
2
3
4
Note:
Marking is "VE-".
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
8
V
Collector to emitter voltage
V
CEO
3.5
V
Emitter to base voltage
V
EBO
1.2
V
Collector current
I
C
35
mA
Pc
80
mW
Collector power dissipation
Pc
note1
200
mW
Junction temperature
Tj
150
°
C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. Value on PCB ( FR-4 : 40 x 40 x 1.6mm Double side )
