Renesas 3SK318 Specification Sheet Download

Page: 1 / 8

Rev.2.00 Aug 10, 2005 page 1 of 7

3SK318

Silicon N-Channel Dual Gate MOS FET
UHF RF Amplifier

REJ03G0819-0200

(Previous ADE-208-600)

Rev.2.00

Aug.10.2005

Features

•

Low noise characteristics;
(NF= 1.4 dB typ. at f= 900 MHz)

•

Excellent cross modulation characteristics

•

Capable low voltage operation; +B= 5V

Outline

1. Source
2. Gate1
3. Gate2
4. Drain

RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)

Note: Marking is “YB–“.

Summary of Contents for 3SK318

Page 1: ...0 Previous ADE 208 600 Rev 2 00 Aug 10 2005 Features Low noise characteristics NF 1 4 dB typ at f 900 MHz Excellent cross modulation characteristics Capable low voltage operation B 5V Outline 1 Source...

Page 2: ...2 to source breakdown voltage V BR G2SS 6 V IG2 10 A VG1S VDS 0 Gate1 to source cutoff current IG1SS 100 nA VG1S 5 V VG2S VDS 0 Gate2 to source cutoff current IG2SS 100 nA VG2S 5 V VG1S VDS 0 Gate1 to...

Page 3: ...mA Gate1 to Source Voltage VG1S V Drain Current vs Gate1 to Source Voltage VDS 3 5 V 2 0 V 2 5 V 1 5 V VG2S 1 0 V 20 16 12 8 4 0 1 2 3 4 5 Drain Current I D mA Gate2 to Source Voltage VG2S V Drain Cu...

Page 4: ...5 V VG2S 3 V f 900 MHz VG2S 3 V ID 10 mA f 900 MHz 5 4 3 2 1 0 2 4 6 8 10 0 1 2 3 4 5 0 1 2 3 4 5 Noise Figure NF dB Noise Figure vs Drain to Source Voltage Drain to Source Voltage VDS V Power Gain vs...

Page 5: ...0 90 120 150 180 150 90 60 30 120 Scale 0 002 div 0 30 60 90 120 150 180 150 90 60 30 120 10 5 4 3 2 1 5 1 8 2 3 4 5 10 6 4 2 0 2 4 6 8 1 1 5 2 4 6 8 1 2 3 4 5 1 5 10 Test Condition 50 to 1000 MHz 50...

Page 6: ...75 0 0 983 15 3 400 0 972 24 1 2 28 147 6 0 00533 78 0 0 980 17 4 450 0 969 27 0 2 26 143 6 0 00588 71 6 0 976 19 6 500 0 954 29 7 2 23 140 0 0 00617 69 5 0 971 21 7 550 0 955 32 8 2 19 135 9 0 00666...

Page 7: ...0 0 4 0 35 0 42 0 5 0 15 2 2 1 35 2 4 0 7 L1 0 1 0 5 0 6 0 05 0 05 0 45 0 9 Dimension in Millimeters Reference Symbol Min Nom Max A3 e2 0 6 b2 0 3 b3 0 4 b5 0 55 SC 82A 0 006g MASS Typ CMPAK 4 T CMPA...

Page 8: ...or other loss resulting from the information contained herein 5 Renesas Technology Corp semiconductors are not designed or manufactured for use in a device or system that is used under circumstances...