LTE Module Series
EG95 Hardware Design
EG95_Hardware_Design 20 / 81
(U)SIM Interfaces
Pin Name
Pin No. I/O Description
DC Characteristics
Comment
USIM_GND
47
Specified ground for
(U)SIM card
USIM1_VDD
43
PO
Power supply for
(U)SIM card
For 1.8V (U)SIM:
Vmax=1.9V
Vmin=1.7V
For 3.0V (U)SIM:
Vmax=3.05V
Vmin=2.7V
I
O
max=50mA
Either 1.8V or 3.0V is
supported by the
module automatically.
USIM2_VDD
87
USIM1_DATA 45
IO
Data signal of
(U)SIM card
For 1.8V (U)SIM:
V
IL
max=0.6V
V
IH
min=1.2V
V
OL
max=0.45V
V
O
in=1.35V
For 3.0V (U)SIM:
V
IL
max=1.0V
V
IH
min=1.95V
V
OL
max=0.45V
V
O
in=2.55V
USIM2_DATA 86
USIM1_CLK
46
DO
Clock signal of
(U)SIM card
For 1.8V (U)SIM:
V
OL
max=0.45V
V
O
in=1.35V
For 3.0V (U)SIM:
V
OL
max=0.45V
V
O
in=2.55V
USIM2_CLK
84
USIM1_RST
44
DO
Reset signal of
(U)SIM card
For 1.8V (U)SIM:
V
OL
max=0.45V
V
O
in=1.35V
For 3.0V (U)SIM:
V
OL
max=0.45V
V
O
in=2.55V
USIM2_RST
85
USIM1_
PRESENCE
42
DI
(U)SIM card
insertion detection
V
IL
min=-0.3V
V
IL
max=0.6V
V
IH
min=1.2V
V
IH
max=2.0V
1.8V power domain.
If unused, keep it
open.
USIM2_
PRESENCE
83