SCALE™-2+ 2SC0435T
Preliminary Description & Application Manual
www.power.com/igbt-driver
Page 12
1x active clamping terminal ACLx
1x turn-on gate terminals GHx
1x turn-off gate terminals GLx
All inputs and outputs are ESD-protected.
DC/DC output (VISOx), emitter (VEx) and COMx terminals
The driver is equipped with blocking capacitors on the secondary side of the DC/DC converter (for values,
refer to the data sheet /3/).
Power semiconductors with a gate charge of up to 3μC can be driven without additional capacitors on the
secondary side. For IGBTs or MOSFETs with a higher gate charge, a minimum value of 3µF external blocking
capacitance is recommended for every 1µC gate charge beyond 3µC. The blocking capacitors must be placed
between VISOx and VEx (C
1x
in Fig. 7) as well as between VEx and COMx (C
2x
in Fig. 7). They must be
connected as close as possible to the driver’s terminal pins with minimum inductance. It is recommended to
use the same capacitance value for both C
1x
and C
2x
. Ceramic capacitors with a dielectric strength >20V are
recommended.
If the capacitances C
1x
or C
2x
exceed 150µF, please contact Power Integrations' support service.
No static load must be applied between VISOx and VEx, or between VEx and COMx. A static load can be
applied between VISOx and COMx if necessary.
Reference terminal (REFx)
The reference terminal REFx allows the threshold to be set for short-circuit and/or overcurrent protection with
a resistor placed between REFx and VEx. A constant current of 150µA is provided at pin REFx.
Collector sense (VCEx)
The collector sense must be connected to the IGBT collector or MOSFET drain with the circuit shown in Fig. 7
in order to detect an IGBT or MOSFET overcurrent or short-circuit.
It is recommended to dimension the resistor value of R
vcex
in order to get a current of about 0.6-1mA
flowing through R
vcex
(e.g. 1.2-1.8MΩ for V
DC-LINK
=1200V). The current through R
vcex
must not exceed
1mA. It is possible to use a high-voltage resistor as well as series connected resistor. In any case, the
min. creepage distance related to the application must be considered.
The diode D
6x
must have a very low leakage current and a blocking voltage of >40V (e.g. BAS416).
Schottky diodes must be explicitly avoided.
For more details about the functionality of this feature and the dimensioning of the response time, refer to
“VCE monitoring / short-circuit protection” on page 15.
Active clamping (ACLx)
Active clamping is a technique designed to partially turn on the power semiconductor as soon as the collector-
emitter (drain-source) voltage exceeds a predefined threshold. The power semiconductor is then kept in linear
operation.
Basic active clamping topologies implement a single feedback path from the IGBT’s collector through transient
voltage suppressor devices (TVS) to the IGBT gate. The 2SC0435T supports Power Integrations' Advanced
