
1999 Feb 16
8
Philips Semiconductors
Preliminary specification
12-bit high-speed Analog-to-Digital
Converter (ADC)
TDA8767
Voltage controlled regulator input V
ref
(referenced to V
CCA
)
V
ref(FS)
full scale fixed voltage
V
CCA
= 5 V
−
3.175
−
V
V
i(p-p)
−
V
i(p-p)
input voltage amplitude
(peak-to-peak value)
differential mode
−
2.0
−
V
single mode; V
i
= 2.5 V
−
2.0
−
V
I
ref
input current at V
ref
−
10
−
µ
A
Outputs (referenced to DGND)
D
IGITAL OUTPUTS
D11
TO
D0
AND
IR (
REFERENCED TO
DGND)
V
OL
LOW-level output voltage
I
OL
= 2 mA
0
−
0.5
V
V
OH
HIGH-level output voltage
I
OH
=
−
0.4 mA
V
CCO
−
0.5
−
V
CCD
V
I
O
output current in 3-state
0.5 V < V
O
< V
CCO
−
20
−
+20
µ
A
Switching characteristics
C
LOCK FREQUENCY
f
clk
(see Fig.3)
f
clk(min)
minimum clock frequency
SH = HIGH
−
−
1
MHz
SH = LOW
−
−
1
kHz
f
clk(max)
maximum clock frequency
TDA8767H/1
10
−
−
MHz
TDA8767H/2
20
−
−
MHz
TDA8767H/3
30
−
−
MHz
t
CPH
clock pulse width HIGH
8.5
−
−
ns
t
CPL
clock pulse width LOW
8.5
−
−
ns
Analog signal processing; 50% clock duty factor; V
i
−
V
i
= 2.0 V; V
ref
= V
CCA
−
2 V; see Table 1
L
INEARITY
ILE
integral non-linearity
f
clk
= 4 MHz; ramp input
−
±
3.0
±
4.0
LSB
DLE
differential non-linearity
f
clk
= 4 MHz; ramp input;
no missing codes
−
±
0.6
±
1
LSB
OFER
offset error
V
CCA
= V
CCD
= V
CCO
= 5 V;
T
amb
= 25
°
C; V
i
= V
i
; output
code = 2047
tbf
−
tbf
LSB
GER
gain error amplitude; spread
from device to device
V
CCA
= V
CCD
= V
CCO
= 5 V;
T
amb
= 25
°
C; V
i
−
V
i
= 2.0 V
tbf
−
tbf
LSB
B
ANDWIDTH
(f
clk
= 30 MHz); note 1
B
analog bandwidth
−
1 dB
−
9
−
MHz
−
3 dB
−
18
−
MHz
t
STLH
analog input settling time
LOW-to-HIGH transition
full scale square wave;
note 3
−
tbf
−
ns
t
STHL
analog input settling time
HICH-to-LOW transition
full scale square wave;
note 3
−
tbf
−
ns
H
ARMONICS
THD
total harmonic distortion
f
clk
= 30 MHz; f
i
= 4.43 MHz;
note 2
−
−
64
−
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT