Philips Semiconductors
Product specification
µ
A741/
µ
A741C/SA741C
General purpose operational amplifier
1994 Aug 31
2
DC ELECTRICAL CHARACTERISTICS
T
A
= 25
°
C, V
S
=
±
15V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
µ
A741
µ
A741C
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
Min
Typ
Max
Min
Typ
Max
UNIT
V
OS
Offset voltage
R
S
=10k
Ω
1.0
5.0
2.0
6.0
mV
R
S
=10k
Ω
, over temp.
1.0
6.0
7.5
mV
∆
V
OS
/
∆
T
10
10
µ
V/
°
C
I
OS
Offset current
20
200
20
200
nA
Over temp.
300
nA
T
A
=+125
°
C
7.0
200
nA
T
A
=-55
°
C
20
500
nA
∆
I
OS
/
∆
T
200
200
pA/
°
C
I
BIAS
Input bias current
80
500
80
500
nA
Over temp.
800
nA
T
A
=+125
°
C
30
500
nA
T
A
=-55
°
C
300
1500
nA
∆
I
B
/
∆
T
1
1
nA/
°
C
R
L
=10k
Ω
±
12
±
14
±
12
±
14
V
V
OUT
Output voltage swing
R
L
=2k
Ω
, over temp.
±
10
±
13
±
10
±
13
V
R
L
=2k
Ω
, V
O
=
±
10V
50
200
20
200
V/mV
A
VOL
Large-signal voltage gain
R
L
=2k
Ω
, V
O
=
±
10V,
over temp.
25
15
V/mV
Offset voltage adjustment range
±
30
±
30
mV
R
S
≤
10k
Ω
10
150
µ
V/V
PSRR
Supply voltage rejection ratio
R
S
≤
10k
Ω
, over temp.
10
150
µ
V/V
70
90
dB
CMRR
Common-mode rejection ratio
Over temp.
70
90
dB
1.4
2.8
1.4
2.8
mA
I
CC
Supply current
T
A
=+125
°
C
1.5
2.5
mA
T
A
=-55
°
C
2.0
3.3
mA
V
IN
Input voltage range
(
µ
A741, over temp.)
±
12
±
13
±
12
±
13
V
R
IN
Input resistance
0.3
2.0
0.3
2.0
M
Ω
50
85
50
85
mW
P
D
Power consumption
T
A
=+125
°
C
45
75
mW
T
A
=-55
°
C
45
100
mW
R
OUT
Output resistance
75
75
Ω
I
SC
Output short-circuit current
10
25
60
10
25
60
mA
