Philips PiP3209-R, Product Specification, Page: 3 / 8

Philips Semiconductors Product Specification
TOPFET high side switch PIP3209-R
STATIC CHARACTERISTICS
Limits are at -40˚C
≤
T
mb
≤
150˚C and typicals at T
mb
= 25 ˚C unless otherwise stated.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Clamping voltages
V
BG
Battery to ground I
G
= 1 mA 50 55 65 V
V
BL
Battery to load I
L
= I
G
= 1 mA 50 55 65 V
-V
LG
Negative load to ground I
L
= 10 mA 18 23 28 V
-V
LG
Negative load voltage
1
I
L
= 1 A; t
p
= 300
µ
s 20 25 30 V
Supply voltage battery to ground
V
BG
Operating range
2
- 5.5 - 35 V
Currents 9 V
≤
V
BG
≤
16 V
I
B
Quiescent current
3
V
LG
= 0 V - - 20
µ
A
T
mb
= 25˚C - 0.1 2
µ
A
I
L
Off-state load current
4
V
BL
= V
BG
- - 20
µ
A
T
mb
= 25˚C - 0.1 1
µ
A
I
G
Operating current
5
I
L
= 0 A - 2 4 mA
I
L
Nominal load current
6
V
BL
= 0.5 V 2 - - A
Resistances V
BG
I
L
t
p
T
mb
R
ON
On-state resistance
7
9 to 35 V 1 A 300
µ
s 25˚C - 135 180 m
Ω
150˚C - - 330 m
Ω
R
ON
On-state resistance 6 V 1 A 300
µ
s 25˚C - 170 225 m
Ω
150˚C - - 410 m
Ω
R
G
Internal ground resistance I
G
= 10 mA 95 150 190
Ω
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
2 On-state resistance is increased if the supply voltage is less than 9 V.
3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.
4 The measured current is in the load pin only.
5 This is the continuous current drawn from the supply with no load connected, but with the input high.
6 Defined as in ISO 10483-1. For comparison purposes only.
7 The supply and input voltage for the R
ON
tests are continuous. The specified pulse duration t
p
refers only to the applied load current.
July 2001 3 Rev 1.000