Philips Semiconductors
Product specification
TOPFET dual high side switch
PIP3202-DC
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40˚C
≤
T
mb
≤
150˚C and typicals at T
mb
= 25˚C. Refer to
TRUTH TABLE
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Undervoltage
V
BG(UV)
Low supply threshold voltage
1
2
4.2
5.3
V
∆
V
BG(UV)
Hysteresis
0.1
0.5
1
V
Overvoltage
V
BG(OV)
High supply threshold voltage
2
35
40
45
V
∆
V
BG(OV)
Hysteresis
0.4
1
2
V
I
BG(OV)
Operating current per channel
V
BG
> V
BG(OV)
-
1
2
mA
OVERLOAD PROTECTION CHARACTERISTICS
Independent protection per channel. Refer to
TRUTH TABLE
.
5.5 V
≤
V
BG
≤
35 V, limits are at -40˚C
≤
T
mb
≤
150˚C and typicals at T
mb
= 25˚C unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Overload protection
V
BL
= V
BG
; t
p
= 300
µ
s
I
L(lim)
Load current limiting
V
BG
≥
8 V
18
30
42
A
V
BG
= 5.5 V
15
27
42
A
Short circuit load protection
T
mb
≤
125˚C prior to overload
3
P
D(TO)
Overload power threshold
for latched protection
4
100
150
200
W
T
DSC
Characteristic time
which determines trip time
5
-
200
500
µ
s
Overtemperature protection
T
j(TO)
Threshold junction temperature
150
170
190
˚C
∆
T
j(TO)
Hysteresis
6
3
10
20
˚C
1 Undervoltage sensors causes each channel to switch off and reset.
2 Overvoltage sensors causes each output channel to switch off to protect its load.
3 Above this temperature measurement of these parameters is prevented because OT protection may occur prior to SC protection.
4 SC protection for P
D
> P
D(TO)
is latched. Normal operation may only be resumed after the input is toggled low then high again.
Normal operation is maintained as long as P
D
< P
D(TO)
and T
j
< T
j(TO)
.
5 Trip time t
d sc
varies with overload dissipation P
D
according to the exponential model formula t
d sc
≈
T
DSC
/ LN[ P
D
/ P
D(TO)
].
6 After cooling below the reset temperature the channel will resume normal operation.
September 2001
5
Rev 1.000
