Philips Semiconductors
Product data
NE/SA/SE5534/5534A
Single low noise operational amplifier
2001 Aug 03
4
AC ELECTRICAL CHARACTERISTICS
T
amb
= 25
°
C, V
S
=
±
15 V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
NE/SA5534/5534A
SE5534/5534A
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
Min
Typ
Max
Min
Typ
Max
UNIT
R
OUT
Output resistance
A
V
= 30 dB closed-loop
f = 10 kHz; R
L
= 600
Ω
;
C
C
= 22 pF
0.3
0.3
Ω
Transient response
Voltage-follower, V
IN
= 50 mV
R
L
= 600
Ω
; C
C
= 22 pF,
C
L
= 100 pF
t
R
Rise time
20
20
ns
Overshoot
20
20
%
Transient response
V
IN
= 50 mV, R
L
= 600
Ω
Transient res onse
C
C
= 47 pF, C
L
= 500 pF
t
R
Rise time
50
50
ns
Overshoot
35
35
%
A
V
Gain
f = 10 kHz, C
C
= 0
6
6
V/mV
f = 10 kHz, C
C
= 22 pF
2.2
2.2
V/mV
GBW
Gain bandwidth product
C
C
= 22 pF, C
L
= 100 pF
10
10
MHz
SR
Slew rate
C
C
= 0
13
13
V/
µ
s
SR
Slew rate
C
C
= 22 pF
6
6
V/
µ
s
V
OUT
=
±
10 V, C
C
= 0 pF
200
200
kHz
Power bandwidth
V
OUT
=
±
10 V, C
C
= 22 pF
95
95
kHz
Power bandwidth
V
OUT
=
±
14 V, R
L
= 600
Ω
70
70
kHz
C
C
= 22 pF, V
CC
=
±
18 V
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°
C, V
S
= 15 V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
NE/SA/SE5534
NE/SA/SE5534A
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
Min
Typ
Max
Min
Typ
Max
UNIT
V
NOISE
Input noise voltage
f
O
= 30 Hz
7
5.5
7
nV/
√
Hz
V
NOISE
In ut noise voltage
f
O
= 1 kHz
4
3.5
4.5
nV/
√
Hz
I
NOISE
Input noise current
f
O
= 30 Hz
2.5
1.5
pA/
√
Hz
I
NOISE
In ut noise current
f
O
= 1 kHz
0.6
0.4
pA/
√
Hz
Broadband noise figure
f = 10 Hz to 20 kHz; R
S
= 5 k
Ω
0.9
dB
Channel separation
f = 1 kHz; R
S
= 5 k
Ω
110
110
dB
