Panasonic Transistors 2SC5632G, Specifications

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Transistors
1 Publication date: June 2007 SJC00369AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5632G
Silicon NPN epitaxial planar type
For high-frequency amplification and switching
■
Features
•
High transition frequency f
T
•
S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
■
Absolute Maximum Ratings T
a
=
25
°
C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
=
100
µ
A, I
E
=
0 15 V
Emitter-base cutoff current (Collector open) I
EBO
V
EB
=
2 V, I
C
=
0 2
µ
A
Forward current transfer ratio h
FE
V
CE
=
4 V, I
C
=
2 mA 100 350

h
FE
ratio
*
∆
h
FE
h
FE2
: V
CE
=
4 V, I
C
=
100
µ
A 0.6 1.5

h
FE1
: V
CE
=
4 V, I
C
=
2 mA
Collector-emitter saturation voltage V
CE(sat)
I
C
=
20 mA, I
B
=
4 mA 0.1 V
Transition frequency f
T
V
CE
=
5 V, I
C
=
15 mA, f
=
200 MHz 0.6 1.1 GHz
Collector output capacitance C
ob
V
CB
=
10 V, I
E
=
0, f
=
1 MHz 1.0 1.6 pF
(Common base, input open circuited)
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
15 V
Collector-emitter voltage (Base open) V
CEO
8 V
Emitter-base voltage (Collector open) V
EBO
3 V
Collector current I
C
50 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150
°
C
Storage temperature T
stg
−
55 to
+
150
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *:
∆
h
FE
=
h
FE2
/ h
FE1
■
Package
•
Code
SMini3-F2
•
Marking Symbol: 2R
•
Pin Name
1: Base
2: Emitter
3: Collector