background image

2SC3937G

2

SJC00363AED

This product complies with the RoHS Directive (EU 2002/95/EC).

V

CE(sat)

 

 I

C

h

FE

 

 I

C

f

T

 

 I

C

P

C

 

 T

a

I

C

 

 V

CE

I

C

 

 V

BE

C

ob

 

 V

CB

G

UM

 

 I

C

NF 

 I

C

0

160

40

120

80

0

200

160

120

80

40

Collector power dissipation  P

C

  

(mW

)

Ambient temperature  T

a

  (

°

C)

0

12

10

8

2

6

4

0

60

50

40

30

20

10

T

a

 

=

 25

°

C

350 

µ

A

300 

µ

A

250 

µ

A

200 

µ

A

150 

µ

A

100 

µ

A

50 

µ

A

I

B

 

=

 400 

µ

A

Collector current  I

C

  

(mA

)

Collector-emitter voltage  V

CE

  (V)

0

2.0

1.6

0.4

1.2

0.8

0

120

100

80

60

40

20

V

CE

 

=

 8 V

T

a

 

=

 75

°

C

25

°

C

25

°

C

Base-emitter voltage  V

BE

  (V)

Collector current  I

C

  

(mA

)

0.1

1

10

100

0.01

0.1

1

10

100

I

C

 / I

B

 

=

 10

T

a

 

=

 75

°

C, 25

°

C, 

25

°

C

Collector-emitter saturation voltage  V

CE(sat)

  

(V

)

Collector current  I

C

  (mA)

0.1

1

10

100

0

600

500

400

300

200

100

V

CE

 

=

 8 V

T

a

 

=

 75

°

C

25

°

C

25

°

C

Forward current transfer ratio  h

FE

Collector current  I

C

  (mA)

0.1

1

10

100

0

12

10

8

6

4

2

V

CE

 

=

 8 V

=

 800 MHz

T

a

 

=

 25

°

C

Transition frequency  f

T

  

(GHz

)

Collector current  I

C

  (mA)

0.1

1

10

100

0

2.4

2.0

1.6

1.2

0.8

0.4

I

E

 

=

 0

=

 1 MHz

T

a

 

=

 25

°

C

Collector-base voltage  V

CB

  (V)

Collector output capacitance

  (Common base, input open circuited)  

C

ob

  (pF)

0.1

1

10

100

0

24

20

16

12

8

4

V

CE

 

=

 8 V

=

 800 MHz

T

a

 

=

 25

°

C

Maximum unilateral power gain  G

UM

  

(dB

)

Collector current  I

C

  (mA)

0.1

1

10

100

0

6

5

4

3

2

1

V

CE

 

=

 8 V

(R

g

 

=

 50 

)

=

 800 MHz

T

a

 

=

 25

°

C

Noise figure  NF  

(dB

)

Collector current  I

C

  (mA)

Summary of Contents for Transistors 2SC3937G

Page 1: ...hFE2 VCE 1 V IC 3 mA 80 280 Transition frequency fT VCE 8 V IC 20 mA f 0 8 GHz 6 GHz Collector output capacitance Cob VCB 10 V IE 0 f 1 MHz 0 7 1 2 pF Common base input open circuited Forward transfer gain S21e 2 VCE 8 V IC 20 mA f 0 8 GHz 13 dB Maximum unilateral power gain GUM VCE 8 V IC 20 mA f 0 8 GHz 14 dB Noise figure NF VCE 8 V IC 7 mA f 0 8 GHz 1 0 1 7 dB Electrical Characteristics Ta 25 C...

Page 2: ...100 0 01 0 1 1 10 100 IC IB 10 Ta 75 C 25 C 25 C Collector emitter saturation voltage V CE sat V Collector current IC mA 0 1 1 10 100 0 600 500 400 300 200 100 VCE 8 V Ta 75 C 25 C 25 C Forward current transfer ratio h FE Collector current IC mA 0 1 1 10 100 0 12 10 8 6 4 2 VCE 8 V f 800 MHz Ta 25 C Transition frequency f T GHz Collector current IC mA 0 1 1 10 100 0 2 4 2 0 1 6 1 2 0 8 0 4 IE 0 f ...

Page 3: ... product complies with the RoHS Directive EU 2002 95 EC SMini3 F2 Unit mm 0 30 0 05 0 02 0 13 0 05 0 02 2 00 0 20 0 89 0 90 0 10 0 65 0 65 1 30 0 10 1 25 0 10 2 10 0 10 0 425 0 050 0 49 0 to 0 10 5 5 3 1 2 ...

Page 4: ...ard applications intended 4 The products and product specifications described in this book are subject to change without notice for modification and or im provement At the final stage of your design purchasing or use of the products therefore ask for the most up to date Product Standards in advance to make sure that the latest specifications satisfy your requirements 5 When designing your equipmen...

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