background image

2SC3931G

3

SJC00358AED

This product complies with the RoHS Directive (EU 2002/95/EC).

C

ob

 

 V

CB

G

P

 

 I

E

NF 

 I

E

b

ie

 

 g

ie

b

re

 

 g

re

b

fe

 

 g

fe

b

oe

 

 g

oe

0

30

25

20

5

15

10

0

1.2

1.0

0.8

0.6

0.4

0.2

I

E

 

=

 0

=

 1 MHz

T

a

 

=

 25

°

C

Collector-base voltage  V

CB

  (V)

Collector output capacitance

  (Common base, input open circuited)  

C

ob

  (pF)

 0.1

1

10

100

0

40

30

10

20

=

 100 MHz

R

g

 

=

 50 

T

a

 

=

 25

°

C

V

CE

 

=

 10 V

6 V

Power gain  G

P

  

(dB

)

Emitter current  I

E

  (mA)

 0.1

1

10

100

0

12

10

8

6

4

2

=

 100 MHz

R

g

 

=

 50 k

T

a

 

=

 25

°

C

V

CE

 

=

 6 V, 10 V

Noise figure  NF  

(dB

)

Emitter current  I

E

  (mA)

0

15

9

3

6

12

0

20

16

12

8

4

y

ie

 

=

 g

ie

 

+

 jb

ie

V

CE

 

=

 10 V

100

100

1 mA

2 mA

4 mA

7 mA

I

E

 

=

 

 0.5 mA

150

=

 10.7 MHz

58

58

25

25

Input conductance  g

ie

  (mS)

Input susceptance  b

ie

  

(mS

)

 0.5

0

 0.1

 0.4

 0.2

 0.3

6

0

1

2

3

4

5

y

re

 

=

 g

re

 

+

 jb

re

V

CE

 

=

 10 V

=

 150 MHz

I

E

 

=

 

7 mA

4 mA

1 mA

25

58

100

10.7

Reverse transfer conductance  g

re

  (mS)

Reverse transfer susceptance  b

re

  

(mS

)

0

100

80

20

60

40

120

0

20

40

60

80

100

y

fe

 

=

 g

fe

 

+

 jb

fe

V

CE

 

=

 10 V

=

 150 MHz

10.7

 0.4 mA

1 mA

2 mA

4 mA

I

E

 

=

 

7 mA

100

100

100

150

150

58

58

Forward transfer conductance  g

fe

  (mS)

Forward transfer susceptance  b

fe

  

(mS

)

0

0.5

0.4

0.1

0.3

0.2

0

1.2

1.0

0.8

0.6

0.4

0.2

y

oe

 

=

 g

oe

 

+

 jb

oe

V

CE

 

=

 10 V

=

 10.7 MHz

I

E

 

=

 

 0.5 mA

2 mA

4 mA

7 mA

1 mA

58

25

100

150

Output conductance  g

oe

  (mS)

Output susceptance  b

oe

  

(mS

)

Summary of Contents for Transistors 2SC3931G

Page 1: ...ameter Symbol Conditions Min Typ Max Unit Collector base voltage Emitter open VCBO IC 10 µA IE 0 30 V Emitter base voltage Collector open VEBO IE 10 µA IC 0 3 V Base emitter voltage VBE VCB 6 V IE 1 mA 720 mV Forward current transfer ratio hFE VCB 6 V IE 1 mA 65 260 Transition frequency fT VCB 6 V IE 1 mA f 200 MHz 450 650 MHz Common emitter reverse transfer Cre VCB 6 V IE 1 mA f 10 7 MHz 0 8 1 0 ...

Page 2: ...VCE 6 V Ta 75 C 25 C 25 C Base emitter voltage VBE V Collector current I C mA 0 1 1 10 100 0 01 0 1 1 10 100 IC IB 10 Ta 75 C 25 C 25 C Collector emitter saturation voltage V CE sat V Collector current IC mA 0 1 1 10 100 0 360 300 240 180 120 60 VCE 6 V Ta 75 C 25 C 25 C Forward current transfer ratio h FE Collector current IC mA 0 1 1 10 100 0 1200 1000 800 600 400 200 VCB 6 V Ta 25 C Transition ...

Page 3: ... 9 3 6 12 0 20 16 12 8 4 yie gie jbie VCE 10 V 100 100 1 mA 2 mA 4 mA 7 mA I E 0 5 mA 150 f 10 7 MHz 58 58 25 25 Input conductance gie mS Input susceptance b ie mS 0 5 0 0 1 0 4 0 2 0 3 6 0 1 2 3 4 5 yre gre jbre VCE 10 V f 150 MHz IE 7 mA 4 mA 1 mA 25 58 100 10 7 Reverse transfer conductance gre mS Reverse transfer susceptance b re mS 0 100 80 20 60 40 120 0 20 40 60 80 100 yfe gfe jbfe VCE 10 V ...

Page 4: ... product complies with the RoHS Directive EU 2002 95 EC SMini3 F2 Unit mm 0 30 0 05 0 02 0 13 0 05 0 02 2 00 0 20 0 89 0 90 0 10 0 65 0 65 1 30 0 10 1 25 0 10 2 10 0 10 0 425 0 050 0 49 0 to 0 10 5 5 3 1 2 ...

Page 5: ...ard applications intended 4 The products and product specifications described in this book are subject to change without notice for modification and or im provement At the final stage of your design purchasing or use of the products therefore ask for the most up to date Product Standards in advance to make sure that the latest specifications satisfy your requirements 5 When designing your equipmen...

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