Panasonic Transistors 2SC3931G, Specification Sheet

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1
Transistors
Publication date: April 2007 SJC00358AED
2SC3931G
Silicon NPN epitaxial planar type
For high-frequency amplification
■
Features
•
Optimum for RF amplification of FM/AM radios
•
High transition frequency f
T
•
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■
Absolute Maximum Ratings T
a
=
25
°
C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
30 V
Collector-emitter voltage (Base open) V
CEO
20 V
Emitter-base voltage (Collector open) V
EBO
3 V
Collector current I
C
15 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150
°
C
Storage temperature T
stg
−
55 to
+
150
°
C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
=
10
µ
A, I
E
=
0 30 V
Emitter-base voltage (Collector open) V
EBO
I
E
=
10
µ
A, I
C
=
0 3 V
Base-emitter voltage V
BE
V
CB
=
6 V, I
E
= −
1 mA 720 mV
Forward current transfer ratio
*
h
FE
V
CB
=
6 V, I
E
= −
1 mA 65 260

Transition frequency f
T
V
CB
=
6 V, I
E
= −
1 mA, f
=
200 MHz 450 650 MHz
Common-emitter reverse transfer C
re
V
CB
=
6 V, I
E
= −
1 mA, f
=
10.7 MHz 0.8 1.0 pF
capacitance
Power gain G
P
V
CB
=
6 V, I
E
= −
1 mA, f
=
100 MHz 24 dB
Noise figure NF V
CB
=
6 V, I
E
= −
1 mA, f
=
100 MHz 3.3 dB
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank C D
h
FE
65 to 160 100 to 260
This product complies with the RoHS Directive (EU 2002/95/EC).
■
Package
•
Code
SMini3-F2
•
Marking Symbol: U
•
Pin Name
1. Base
2. Emitter
3. Collector