Panasonic Transistors 2SB1722G, Specifications

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Transistors
1 Publication date: May 2007 SJC00389AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1722G
Silicon PNP epitaxial planar type
For high breakdown voltage low-frequency amplification
■
Features
•
High collector-emitter voltage (Base open) V
CEO
•
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■
Absolute Maximum Ratings T
a
=
25
°
C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−
100 V
Collector-emitter voltage (Base open) V
CEO
−
100 V
Emitter-base voltage (Collector open) V
EBO
−
5 V
Collector current I
C
−
20 mA
Peak collector current I
CP
−
50 mA
Collector power dissipation P
C
125 mW
Junction temperature T
j
125
°
C
Storage temperature T
stg
−
55 to
+
125
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= −
10
µ
A, I
E
=
0
−
100 V
Collector-emitter voltage (Base open) V
CEO
I
C
= −
1 mA, I
B
=
0
−
100 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −
10
µ
A, I
C
=
0
−
5 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −
50 V, I
E
=
0
−
100 nA
Collector-emitter cut-off current (Base open) I
CEO
V
CE
= −
50 V, I
B
=
0
−
1
µ
A
Forward current transfer ratio h
FE
V
CE
= −
10 V, I
C
= −
2 mA 200 700

Collector-emitter saturation voltage V
CE(sat)
I
C
= −
10 mA, I
B
= −
1 mA
−
0.3 V
Transition frequency f
T
V
CB
= −
5 V, I
E
=
2 mA, f
=
200 MHz 200 MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
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Package
•
Code
SSMini3-F3
•
Marking Symbol: 4R
•
Pin Name
1. Base
2. Emitter
3. Collector