Panasonic Transistors 2SA2161J, Specifications

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Transistors
1 Publication date: November 2004 SJC00312BED
2SA2161J
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC6037J
■
Features
•
Low collector-emitter saturation voltage V
CE(sat)
•
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■
Absolute Maximum Ratings T
a
=
25
°
C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−
15 V
Collector-emitter voltage (Base open) V
CEO
−
12 V
Emitter-base voltage (Collector open) V
EBO
−
5 V
Collector current I
C
−
500 mA
Peak collector current I
CP
−
1 A
Collector power dissipation P
C
125 mW
Junction temperature T
j
125
°
C
Storage temperature T
stg
−
55 to
+
125
°
C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= −
10
µ
A, I
E
=
0
−
15 V
Collector-emitter voltage (Base open) V
CEO
I
C
= −
1 mA, I
B
=
0
−
12 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −
10
µ
A, I
C
=
0
−
5 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −
15 V, I
E
=
0
−
0.1
µ
A
Forward current transfer ratio h
FE
V
CE
= −
2 V, I
C
= −
10 mA 270 680

Collector-emitter saturation voltage V
CE(sat)
I
C
= −
200 mA, I
B
= −
10 mA
−
250 mV
Transition frequency f
T
V
CB
= −
2 V, I
E
=
10 mA, f
=
200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
=
10 V, I
E
=
0, f
=
1 MHz 4.5 pF
(Common base, input open circuited)
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
Marking Symbol: 2U
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
1: Base
2: Emitter
3: Collector
EIAJ: SC-89, JEDEC: SOT-490
SSMini3-F1 Package
0.27 ±
0.02
3
1 2
0.12
+0.03
–0.01
0.80
±
0.05
(0.80)
0.85
1.60
±
0.05
0 to 0.02
0.10 max.
0.70
+0.05 –0.03
(0.375)
5˚
5˚
1.60
+0.05
–0.03
1.00 ±
0.05
(0.50)(0.50)
+0.05 –0.03
This product complies with the RoHS Directive (EU 2002/95/EC).