Switching Diodes
1
Publication date: March 2004
SKF00046BED
MA4X174
(MA174)
Silicon planar type
For small power rectification and surge absorption
■
Features
•
Two isolated elements contained in one package, allowing high-
density mounting
•
High breakdown voltage: V
R
=
200 V
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
200
V
Repetitive peak reverse voltage
V
RRM
250
V
Non-repetitive peak reverse
V
RSM
300
V
surge voltage
Output current
Single
I
O
100
mA
Double
75
Repetitive peak
Single
I
FRM
225
mA
forward current
Double
170
Non-repetitive peak
Single
I
FSM
500
mA
forward surge current
*
Double
375
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
−
55 to
+
125
°
C
Internal Connection
Note) *: t = 1 s
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
= 100 mA
1.3
V
Reverse current
I
R
V
R
= 200 V
1.0
µ
A
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
4
1
3
2
Marking Symbol: M2O
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 3 MHz.
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0.60
+0.10
–0.05
0.40
+0.10
–0.05
1.1
+0.2 –0.1
1.1
+0.3 –0.1
1.50
+0.25 –0.05
2.8
+0.2 –0.3
1.9
±
0.2
(0.65)
(0.2)
(0.95)
(0.95)
0 to 0.1
3
4
2
1
0.5R
Note) The part number in the parenthesis shows conventional part number.
1: Cathode 1
2: Cathode 2
3: Anode 2
4: Anode 1
EIAJ: SC-61
Mini4-G1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
