Panasonic Schottky Barrier Diodes MA3S795EG, Specification

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MA3S795EG
2
SKH00236AED
This product complies with the RoHS Directive (EU 2002/95/EC).
I
F
 V
F
I
R
 V
R
V
F
 T
a
I
R
 T
a
C
t
 V
R
10 –2
0 0.4 0.8 1.2 1.6 2.0 2.4
10 –1
1
10
10 2
10 3
Forward voltage V
F
(V)
Forward current
I
F
(
mA
)
T
a
= 125 ° C
− 20 ° C
75 ° C
25 ° C
10 − 1
0 5 10 15 20 25 30
1
10
10 2
10 3
10 4
Reverse voltage V
R
(V)
Reverse current
I
R
(
µ
A
)
T
a
= 125 ° C
75 ° C
25 ° C
0
0.2
0.4
0.6
0.8
1.0
− 40 0 40 80 120 160 200
Ambient temperature T
a
( ° C)
Forward voltage
V
F
(
V
)
I
F
= 30 mA
10 mA
1 mA
10 − 1
− 40 0 40 80 120 160 200
1
10
10 2
10 3
10 4
Ambient temperature T
a
( ° C)
Reverse current
I
R
(
µ
A
)
V
R
= 25 V
3 V
1 V
0
3.0
2.5
2.0
1.5
1.0
0.5
0 5 10 15 20 25 30
Reverse voltage V
R
(V)
Te
rminal capacitance
C
t
(
pF
)
f = 1 MHz
T
a
= 25 ° C