PGA26E07BA-SWEVB008 Ver. 1.2
19
Switching Characteristics Result:
Condition: VPN=400V, V
AUXH
, V
AUXL
=12V, (Rgon) RA1,RB1
=15/47/100Ω, RA2,RB2=0Ω, RA3,RB3=1Ω, CA3,CB3=2.2nF
I.
Low side device (QA) dV/dt Measurement Data
Figure 19: dV/dT at turn off for QA Figure 20: dV/dT at turn on for QA
II.
V
GS
, V
DS
and I
DS
Measurement Waveform with (Rgon) RA1,RB1=15
Ω
VPN=400V, I
DS
=2.5A
VPN=400V, I
DS
=15A
Turn
ON
dV/dt = -83.8[V/ns]
dV/dt= -64.8[V/ns]
Turn
OFF
dV/dt= 10.2[V/ns]
dV/dt= 67.5 [V/ns]
VGS 4V/div
IL 5A/div
VDS 100V/div
Time scale:20ns/div
5GS/s
VGS 4V/div
IL 5A/div
VDS 100V/div
Time scale:20ns/div
5GS/s
VGS 4V/div
IL 5A/div
VDS 100V/div
Time scale:20ns/div
5GS/s
VGS 4V/div
IL 5A/div
VDS 100V/div
Time scale:20ns/div
5GS/s
Important Note: The data presented is meant to demonstrate the high switching capability of Panasonic X-GaN.
The dV/dT data is for reference use only and measured data maybe different depending on evaluation environment.
Figure 21: QA turn on/off waveforms at I
DS
=2.5A
Figure 22: QA turn on/off waveforms at I
DS
=15A
