Panasonic MAYS0750Z, Specification Sheet

Page: 1 / 2

Zener Diodes
Publication date: May 2005 SKE 00023 AED
1
MAYS0750Z
Silicon planar type
For surge absorption circuits

Features
 

Small terminal capacitance C
 
t

High electrostatic discharge ESD
 

Absolute Maximum Ratings
 
T
a
= 25
aa
° C
Parameter Symbol Rating Unit
Total power dissipation *
1
P
T
150 mW
Junction temperature T
j
TT 150 ° C
Storage temperature T
stg
TT – 55 to + 150 ° C
Electrostatic discharge *
2
ESD ± 12 kV
Note) * 1 : P
T
= 150 mW achieved with a printed circuit board.
*
2 : Test method: IEC 61000 - 4 - 2
(C = 150 pF, R = 330 Ω , Contact discharge: 10 times)

Electrical Characteristics
 
T
a
= 25
aa
° C ± 3 ° C
Parameter Symbol Conditions Min Typ Max Unit
Breakdown voltage * V
BR
V V I
R
= 1 mA
R R
6 . 0 7 . 5 V
Reverse current I
R
V
R
= 5 V
R R
2 µ A
Terminal capacitance C
t
I
R
= 0 V, f = 1 MHz
R R
1 . 5 3 . 0 pF
Note) 1 . Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2 . *: V
Z
guaranted 20 ms after current fl ow.
Marking Symbol: CZ
Unit: mm
1: Anode
2: Cathode
EIAJ: SC-79 SSMini2-F1 Package
0.80
+0.05
–0.03
0.60
+0.05
–0.03
0.12
+0.05
–0.02
1.20
+0.05 –0.03
0
+0
–0.05
0.30
± 0.05
0.01
± 0.01
1.60
±
0.05
0.01
±
0.01
1
2
0.80
±
0.05
(0.80
)
(0.60
)
(0.15
)
(0.60
)
5
°
5 °
This product complies with the RoHS Directive (EU 2002/95/EC).