Schottky Barrier Diodes (SBD)
Publication date: August 2008
SKH00226BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA6J786X
Silicon epitaxial planar type
For high speed switching circuits
Overview
MA6J786X is optimal for general circuit supplies.
The assembly of 3 MA3X786 elements in parallel in one package.
Features
Forward current (Average) I
F(AV)
= 100 mA recti
fi
cation is possible
Short reverse recovery time t
rr
, optimum for high-frequency recti
fi
cation
Low forward voltage V
F
and good recti
fi
cation ef
fi
ciency
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
30
V
Maximum peak reverse voltage
V
RM
30
V
Forward current (Average)
I
F(AV)
100
mA
Peak forward current
I
FM
300
mA
Non-repetitive peak forward surge current
*
I
FSM
1
A
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
-55 to +125
°
C
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F1
I
F
= 100 mA
0.55
V
Reverse current
I
R
V
R
= 30 V
15
m
A
Terminal capacitance
C
t
V
R
= 0, f = 1 MHz
20
pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA, I
rr
= 0.1
×
I
R
,
R
L
= 100
W
1.0
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current
from the operating equipment.
3. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
t
p
=
2
µ
s
t
r
=
0.35 ns
δ =
0.05
I
F
=
I
R
=
100 mA
R
L
=
100
Ω
10%
Input Pulse
Output Pulse
I
rr
=
10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Package
Code
SMini6-F1
Pin Name
1: Anode 1
4: Cathode 3
2: Anode 2
5: Cathode 2
3: Anode 3
6: Cathode 1
Marking Symbol: M8B
Internal Connection
3
(A3)
(C3)
4
1
(A1)
2
(A2)
(C1)
6
(C2)
5
