Schottky Barrier Diodes (SBD)
1
Publication date: February 2008
SKH00111CED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA4ZD14
Silicon epitaxial planar type
For high speed switching
■
Features
•
Two isolated elements are contained in one package, allowing
high-density mounting
•
Low forward voltage: V
F
<
0.40 V
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
20
V
Repetitive peak reverse-voltage
V
RRM
20
V
Forward current
Single
I
F
100
mA
Double
*1
75
Peak forward
Single
I
FM
300
mA
current
Double
*1
225
Non-repetitive peak Single
I
FSM
1
A
forward surge current
*2
Double
*1
0.75
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
−
55 to
+
125
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current
I
R
V
R
=
10 V
20
µ
A
Forward voltage
V
F1
I
F
=
5 mA
0.27
V
V
F2
I
F
=
100 mA
0.40
Terminal capacitance
C
t
V
R
=
0 V, f
=
1 MHz
25
pF
Reverse recovery time
*
t
rr
I
F
=
I
R
=
100 mA
3
ns
I
rr
=
10 mA, R
L
=
100
Ω
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Bias Insertion Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F. Analyzer
(SAS-8130)
R
i
=
50
Ω
t
p
=
2
µ
s
t
r
=
0.35 ns
δ =
0.05
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
Ω
10%
Input Pulse
Output Pulse
I
rr
=
10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) *1: Value of each diode in double diodes used.
*2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz.
4.*: t
rr
measurement circuit
1
2
3
4
■
Package
•
Code
SMini4-F1
•
Pin Name
1: Anode 1
3: Cathode 2
2: Anode 2
4: Cathode 1
■
Marking Symbol: M5D
■
Internal Connection
