Schottky Barrier Diodes (SBD)
Publication date: December
2004
SKH
00144
AED
1
MA4SD05X
Silicon epitaxial planar type
For high-speed switching circuits
Features
Two isolated elements are contained in one package, allowing high-density
mounting
Optimum for high frequency rectifi cation because of its short reverse recovery
time t
rr
time t
time t
Absolute Maximum Ratings
T
a
=
25
aa
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
45
V
Maximum peak reverse voltage
V
RM
V
V
45
V
Forward current
*
1
I
F
100
mA
Peak forward current
*
1
I
FM
300
mA
Non-repetitive peak forward surge current
*
1
,
2
I
FSM
1
A
Junction temperature
T
j
TT
125
°
C
Storage temperature
T
stg
TT
–
55
to +
125
°
C
Note) *
1
: Value for single diode
*
2
:
50
Hz sine wave
1
cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
=
25
aa
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
1
V
V
I
F
=
1
mA
0
.
27
V
V
F
2
V
V
I
F
=
10
mA
0
.
35
V
F
3
V
V
I
F
=
100
mA
0
.
54
0
.
60
Reverse current
I
R
V
R
=
40
V
R
R
5
µ
A
Terminal capacitance
C
t
V
R
=
0
V, f =
1
MHz
R
R
12
18
pF
Reverse recovery time
*
t
rr
tt
I
F
= I
R
=
100
mA, I
R
R
rr
=
10
mA
rrrr
R
L
R
R =
100
LL
Ω
2
.
0
ns
Note)
1
. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7031
measuring methods for diodes.
2
. Absolute frequency of input and output is
250
MHz
2
. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3
. *: t
rr
measurement circuit
rr
rr
Marking Symbol: M
5
C
Internal Connection
Unit: mm
1: Anode 1
2: Anode 2
3: Cathode 2
4: Cathode 1
SSMini4-F1 Package
1.6
±
0.05
5°
1.0
±
0.05
1.
15
±
0.
05
0.
01
±
0.
01
1.
6
±
0.
1
0.25
±
0.05
0.55
±
0.1
0.10
±
0.03
1
2
5°
(0
.2
25
)
(0
.1
5)
4
3
1
2
3
4
This product complies with the RoHS Directive (EU 2002/95/EC).
