Schottky Barrier Diodes (SBD)
1
Publication date: April 2004
SKH00102CED
MA4SD01
Silicon epitaxial planar type
For high speed switching
■
Features
•
Two isolated elements are contained in one package, allowing
high-density mounting
•
Two MA3S781 (MA781) is contained in one package (of a type
in the same direction)
■
Absolute Maximum Ratings
T
a
=
25
°
C
Marking Symbol: M1N
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Internal Connection
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F1
I
F
=
1 mA
0.35
V
V
F2
I
F
=
30 mA
0.9
Reverse current
I
R
V
R
=
30 V
0.5
µ
A
Terminal capacitance
C
t
V
R
=
1 V, f
=
1 MHz
1.5
pF
Reverse recovery time
*
t
rr
I
F
=
I
R
=
10 mA
1.0
ns
I
rr
=
1 mA, R
L
=
100
Ω
Detection efficiency
η
V
IN
=
3 V
(peak)
, f
=
30 MHz
65
%
R
L
=
3.9 k
Ω
, C
L
=
10 pF
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
t
p
=
2
µ
s
t
r
=
0.35 ns
δ =
0.05
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
Ω
10%
Input Pulse
Output Pulse
I
rr
=
1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
1
2
3
4
1: Anode 1
2: Anode 2
3: Cathode 2
4: Cathode 1
SSMini4-F1 Package
Unit: mm
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
30
V
Maximum peak reverse voltage
V
RM
30
V
Forward current
Single
I
F
30
mA
Double
20
Peak forward current
Single
I
FM
150
mA
Double
110
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
−
55 to
+
125
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
4. *: t
rr
measurement circuit
Note) The part number in the parenthesis shows conventional part number.
1.6
±
0.05
5˚
1.0
±
0.05
1.15
±
0.05
0.01
±
0.01
1.6
±
0.1
0.25
±
0.05
0.55
±
0.1
0.10
±
0.03
1
2
5˚
(0.225)
(0.15)
4
3
This product complies with the RoHS Directive (EU 2002/95/EC).
